CENTR BCX55, BCX54, BCX56 Datasheet
MAXIMUM RATINGS (TA=25°C)
BCX54
BCX55
BCX56 UNITS
Collector-Base Voltage V
CBO
45 60 100 V
Collector-Emitter Voltage V
CEO
45 60 80 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
1.0 A
Peak Collector Current I
CM
1.5 A
Base Current I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
104 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
VCB=30V 100 nA
I
CBO
VCB=30V, TA=125°C 10 µA
I
EBO
VEB=5.0V 100 nA
BV
CBO
IC=100µA (BCX54) 45 V
BV
CBO
IC=100µA (BCX55) 60 V
BV
CBO
IC=100µA (BCX56) 100 V
BV
CEO
IC=10mA (BCX54) 45 V
BV
CEO
IC=10mA (BCX55) 60 V
BV
CEO
IC=10mA (BCX56) 80 V
V
CE(SAT)
IC=500mA, IB=50mA 0.5 V
V
BE(ON)
VCE=2.0V, IB=500mA 1.0 V
h
FE
VCE=2.0V, IC=5.0mA 63
h
FE
VCE=2.0V, IC=150mA 63 250
h
FE
VCE=2.0V, IC=150mA
(BCX54-10, BCX55-10, BCX56-10) 63 160
h
FE
VCE=2.0V, IC=150mA
(BCX54-16, BCX55-16, BCX56-16) 100 250
h
FE
VCE=2.0V, IC=500mA 40
f
T
VCE=5.0V, IC=10mA, f=100MHz 130 MHz
BCX54
BCX55
BCX56
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R1 ( 18-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX54,
BCX55, and BCX56 types are NPN Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
BCX54
BCX55
BCX56
SURFACE MOUNT
NPN SILICON TRANSISTOR
R1 ( 18-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
BCX54 BA
BCX54-10 BC
BCX54-16 BD
BCX55 BE
BCX55-10 BG
BCX55-16 BM
BCX56 BH
BCX56-10 BK
BCX56-16 BL
BOTTOM VIEW
B
A
E
F
H
1
2
3
G
C
J
L
K
R3
M
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