CENTR BCX51, BCX53, BCX52 Datasheet
MAXIMUM RATINGS (TA=25°C)
BCX51
BCX52
BCX53 UNITS
Collector-Base Voltage V
CBO
45 60 100 V
Collector-Emitter Voltage V
CEO
45 60 80 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
1.0 A
Peak Collector Current I
CM
1.5 A
Base Current I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation P
D
1.2 W
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
104 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
VCB=30V 100 nA
I
CBO
VCB=30V, TA=125°C 10 µA
I
EBO
VEB=5.0V 100 nA
BV
CBO
IC=100µA (BCX51) 45 V
BV
CBO
IC=100µA (BCX52) 60 V
BV
CBO
IC=100µA (BCX53) 100 V
BV
CEO
IC=10mA (BCX51) 45 V
BV
CEO
IC=10mA (BCX52) 60 V
BV
CEO
IC=10mA (BCX53) 80 V
V
CE(SAT)
IC=500mA, IB=50mA 0.5 V
V
BE(ON)
VCE=2.0V, IB=500mA 1.0 V
h
FE
VCE=2.0V, IC=5.0mA 63
h
FE
VCE=2.0V, IC=150mA 63 250
h
FE
VCE=2.0V, IC=150mA
(BCX51-10, BCX52-10, BCX53-10) 63 160
h
FE
VCE=2.0V, IC=150mA
(BCX51-16, BCX52-16, BCX53-16) 100 250
h
FE
VCE=2.0V, IC=500mA 40
f
T
VCE=5.0V, IC=10mA, f=100MHz 50 MHz
BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R1 ( 18-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX51,
BCX52, and BCX53 types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
R1 ( 18-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
BCX51 AA
BCX51-10 AC
BCX51-16 AD
BCX52 AE
BCX52-10 AG
BCX52-16 AM
BCX53 AH
BCX53-10 AK
BCX53-16 AL
BOTTOM VIEW
B
A
E
F
H
1
2
3
G
C
J
L
K
R3
M
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