CENTR BCV47 Datasheet
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
10
V
Collector Current I
C
500
mA
Peak Collector Current I
CM
800 mA
Base Current I
B
100 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +150 °C
Thermal Resistance Θ
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CBO
VCB=30V 100 nA
I
EBO
VBE=10V 100 nA
BV
CEO
IC=10mA 60 V
BV
CBO
IC=10µA 80 V
BV
EBO
IE=100nA 10 V
V
CE(SAT)
IC=100mA, IB = 0.1mA 1.0 V
V
BE(SAT)
IC=100mA, IB= 0.1mA 1.5 V
h
FE
VCE=5.0V, IC = 1.0mA 2,000
h
FE
VCE=5.0V, IC = 10mA 4,000
h
FE
VCE=5.0V, IC = 100mA 10,000
f
T
VCE=5.0V, IC = 30mA, f=100MHz 220 MHz
BCV47
NPN
SILICON DARLINGTON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 ( 07-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCV47 type is
a Silicon NPN Darlington Transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring extremely high gain.
Marking Code is FG.
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
BCV47
NPN
SILICON DARLINGTON TRANSISTOR
R0 ( 07-December 2001)
MARKING CODE: FG
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
Loading...