CENTR BAW101 Datasheet

TM

BAW101

NEW

DUAL, ISOLATED HIGH VOLTAGE

SWITCHING DIODES

DESCRIPTION

The CENTRAL SEMICONDUCTOR BAW101
type is a Silicon Dual Isolated High Voltage
Switching diode designed for surface mount
switching applications requiring high voltage
capabilities.

Marking Code is CJP.

SOT-143 CASE

MAXIMUM RATINGS (TA=25°C)

SYMBOL UNITS

Continuous Reverse Voltage V
Peak Repetitive Reverse Voltage V
Continuous Forward Current I
Peak Repetitive Forward Current I
Forward Surge Current, tp=1 ms I
Power Dissipation P
Operating and Storage

Central

Semiconductor Corp.

R

RRM
F
FRM
FSM

D

300 V
300 V
200 mA
500 mA
4500 mA
350 mW

Junction Temperature TJ,T
Thermal Resistance Q

ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

I
I
B

V

C
t

R
R

VR

F
T

rr

VR=250V 150 nA
VR=250V, TA=150°C 50 mA
IR=100mA 300 V
IF=100mA 0.9 1.3 V
VR=0V, f=1.0MHz 5.0 pF
IF=IR=30mA, Irr=3.0mA, RL=100W 50 ns

stg

JA

-65 to +150 °C
357 °C/W

90

All Dimensions in Inches (mm).

TOP VIEW

LEAD CODE:

1) Cathode 1

2) Cathode 2

3) Anode 2

4) Anode 1

91

R2