TM
BAS28
DUAL, ISOLATED HIGH SPEED
SWITCHING DIODE
SOT-143 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Continuous Reverse Voltage V
Peak Repetitive Reverse Voltage V
Continuous Forward Current I
Peak Repetitive Forward Current I
Forward Surge Current, tp=1 µsec. I
Forward Surge Current, tp=1 msec. I
Forward Surge Current, tp=1 sec. I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
R
RRM
F
FRM
FSM
FSM
FSM
D
JA
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS28
type is a ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high speed switching applications.
Marking code is A61.
75 V
85 V
250 mA
250 mA
4000 mA
2000 mA
1000 mA
350 mW
stg
-65 to +150 oC
357 oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
R
I
R
I
R
V
F
V
F
V
F
V
F
C
T
t
rr
Q
s
V
FR
VR=25V, TA=150oC 30 µA
VR=75V 1.0 µA
VR=75V, TA=150oC 50 µA
IF=1.0mA 0.715 V
IF=10mA 0.855 V
IF=50mA 1.000 V
IF=150mA 1.250 V
VR=0, f=1 MHz 2.0 pF
IF=IR=10mA, RL=100Ω, Rec. to 1.0mA
IF=10mA, VR=5.0V, RL=500Ω 45 pC
IF=10mA, tr=20ns 1.75 V
6.0 ns
58
All dimensions in inches (mm).
LEAD CODE:
1) CATHODE 1
2) CATHODE 2
3) ANODE 2
4) ANODE 1
R2
59
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