CENTR 2N7002 Datasheet

2N7002

N-CHANNEL

ENHANCEMENT-MODE

MOSFET

SOT-23 CASE

MAXIMUM RATINGS (TA=25oC)

SYMBOL UNITS

Drain-Source Voltage V
Drain-Gate Voltage V
Gate-Source Voltage V
Continuous Drain Current (TC=25oC) I
Continuous Drain Current (TC=100oC) I
Continuous Source Current (Body Diode) I
Maximum Pulsed Drain Current I
Maximum Pulsed Source Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ

DS
DG

GS
D
D
S
DM
SM

D

JA

TM

CentralCentral

Central

CentralCentral

Semiconductor Corp.Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N7002
type is a N-Channel Field Effect Transistor,
manufactured by the N-Channel DMOS
Process, designed for high speed pulsed
amplifier and driver applications.

Marking Code is 702.

60 V
60 V
40 V
115 mA
75 mA
115 mA
800 mA
800 mA
350 mW

stg

-55 to +150
357

o

C

o

C/W

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

I

GSSF

I

GSSR

I

DSS

I

DSS

I

D(ON)

BV

DSS

V

GS(th)

V

DS(ON)

V

DS(ON)

r

DS(ON)

VGS=20V 100 nA
VGS=-20V -100 nA
VDS=60V, VGS=0 1.0 µA
VDS=60V, VGS=0, TA=125oC 500 µA
V

≥ 2V

DS

ID=10µA 60 105 V
VDS=VGS, ID=250µA 1.0 2.1 2.5 V
VGS=10V, ID=500mA 3.75 V
VGS=5.0V, ID=50mA 1.5 V
VGS=10V, ID=500mA 3.7 7.5 Ω

DS(ON)

, VGS=10V 500 mA

56

SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

r

DS(ON)

r

DS(ON)

r

DS(ON)

g

FS

C

rss

C

iss

C

oss

t

on

t

off

V

SD

VGS=10V, ID=500mA, TA=100oC 13.5 Ω
VGS=5.0V, ID=50mA 6.2 7.5 Ω
VGS=5.0V, ID=50mA, TA=100oC 13.5 Ω
V

DS

≥ 2V

DS(ON)

, ID=200mA 80 mmhos
VDS=25V, VGS=0, f=1.0MHz 5.0 pF
VDS=25V, VGS=0, f=1.0MHz 50 pF
VDS=25V, VGS=0, f=1.0MHz 25 pF
VDD=30V, ID=10V, RG=25Ω, RL=25Ω 20 ns
VDD=30V, ID=10V, RG=25Ω, RL=25Ω 20 ns
VGS=0V, IS=11.5mA -1.5 V

All dimensions in inches (mm).

LEAD CODE:

1) GATE

2) SOURCE

3) DRAIN

57

R2

R1