DESCRIPTION:
The CENTRAL SEMICONDUCTOR MMPQ2907A,
consisting of four transistors and available in the
SOIC-16 surface mount package, is designed for
general purpose amplifier and switching applications.
MAXIMUM RATINGS (TA=25°C)
SYMBOL UNITS
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
5.0 V
Continuous Collector Current I
C
600 mA
Power Dissipation P
D
1000 mW
Operating and Storage
Junction Temperature TJ,T
stg
-55 to +150 °C
Thermal Resistance (Total Package) Θ
JA
125 °C/W
Thermal Resistance (Each Transistor) Θ
JA
240 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
CEV
VCE=30V, VBE=0.5V 50 nA
I
CBO
VCB=50V 20 nA
I
CBO
VCB=50V, TA=125°C 20 µA
BV
CBO
IC=10µA 60 V
BV
CEO
IC=10mA 60 V
BV
EBO
IE=10µA 5.0 V
V
CE(SAT)
IC=150mA, IB=15mA 0.4 V
V
CE(SAT)
IC=500mA, IB=50mA 1.6 V
V
BE(SAT)
IC=150mA, IB=15mA 1.3 V
V
BE(SAT)
IC=500mA, IB=50mA 2.6 V
h
FE
VCE=10V, IC=0.1mA 75
h
FE
VCE=10V, IC=1.0mA 100
h
FE
VCE=10V, IC=10mA 100
h
FE
VCE=10V, IC=150mA 100 300
h
FE
VCE=10V, IC=500mA 50
f
T
VCE=20V, IC=50mA, f=100MHz 250 MHz
C
ib
VEB=2.0V, f=100kHz 12 pF
C
ob
VCB=10V, f=100kHz 6.0 pF
t
on
VCC=30V, IC=150mA, IB1=15mA 30 ns
t
d
VCC=30V, IC=150mA, IB1=15mA 8.0 ns
t
r
VCC=30V, IC=150mA, IB1=15mA 20 ns
t
off
VCC=6.0V, IC=150mA, IB1= IB2=15mA 80 ns
t
s
VCC=6.0V, IC=150mA, IB1= IB2=15mA 60 ns
t
f
VCC=6.0V, IC=150mA, IB1= IB2=15mA 20 ns
MMPQ2907A
SURFACE MOUNT
PNP SILICON
QUAD TRANSISTOR
SOIC-16 CASE
Central
Semiconductor Corp.
TM
R0 ( 7-November 2001)