CELER CMM2030-BD Datasheet

3236 Scott Boulevard Santa Clara, California 95054 Phone: [phone] Fax: [phone]

CMM2030-BD

Features

❏ Small Size
❏ High Gain: 12 dB Typical
❏ P1dB = +18 dBm, Typical
❏ 30 kHz to 30 GHz Bandwidth
❏ Low Gain Ripple: 1.0 dB pp Typical
❏ Sub 0.25 Micron PHEMT
❏ Low DC Power Consumption

Applications
❏ Input Stage Driver for LiNb03Modulator

Driver Amplifier @ OC-192

❏ Medium Power Linear Gain Block for

Broadband Systems

❏ Receive Amplifier for OC-192

Description

The CMM2030-BD is a precision GaAs MMIC,
medium power amplifier and is part of Celeritek’s family of
WideFiber™ products for optical communications applica­tions.

The CMM2030-BD optical driver amplifier gives
fiber optic system designers a unique combination of wide­band frequency coverage, along with a flat response and very
low internal jitter. It is a precision PHEMT GaAs MMIC
medium power amplifier with +18 dBm @ P1dB. It operates
from 30 kHz to 32 GHz with 12 dB linear gain. Low internal

jitter makes it especially well suited for high speed digital
data applications.

It is an excellent choice as an input stage amplifier for
Lithium Niobate (Mach-Zehnder) external modulator driver
amplifiers for OC-192/STM64 metropolitan and long-haul
dense wave-division multiplexed optical networking applica­tions and other high speed applications.

When used as an amplifier to drive Celeritek’s
CMM3030-BD as much as 7.5 V peak-to-peak can be
achieved.

CMM2030-BD amplifiers are shipped in Gel Pack
from Celeritek’s foundry.

30 kHz to 30 GHz GaAs MMIC

Optical Modulator Driver Amplifier

Advanced Product Information
February 2003

(1 of 4)

Chip Diagram

Specifications (TA= 25°C, V

DD

= 5V)

(On-Wafer Probe)

Parameters Units Min Typ Max

Frequency Range — 30 kHz 30.0 GHz
Small Signal Gain dB 10.0 12.0
Gain Flatness ±dB 0.6
Input VSWR — 1.8:1
Output VSWR — 1.7:1
Power Output (@1 dB Gain Compression) @ 9 GHz dBm +18.0
Current mA 100 150

Units in Microns

3236 Scott Boulevard, Santa Clara, California 95054
Phone: [phone] Fax: [phone]

CMM2030-BD

Advanced Product Information - February 2003

(2 of 4)

Absolute Maximum Ratings

Parameter Rating

Drain Voltage 12 V
Gate Voltage -5 V
Drain Current 375 mA
Continuous Power Dissipation 3.0 W
Channel Temperature +175°C
Storage Temperature -65°C to +175°C
Mounting Temperature +320°C
Input Power +23 dBm

Die Attach and Bonding Procedures

Die Attach: Eutectic die attach is recommended. For eutec­tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.

Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre­stressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
wire.

Performance Optimization

Using the Gain-Ctl facility of the CMM2030-BD, out­put power may be increased by application of 1.2 to 1.8 Volts
to the Bias Control pad. If the Gain-Ctl facility is not used, a
fixed voltage at the Bias Control pad can be implemented by

connecting a off-chip parallel resistor to the pad which will
lower the output voltage accordingly.

If Bias Control voltage is decreased further than those
lowest values given in the tables, both gain and output power
will start to drop.

Typical Performance

P1dB vs Frequency