3236 Scott Boulevard Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095
2.0 to 22.0 GHz
GaAs MMIC
Power Amplifier
Advanced Product Information
October 2003 (1 of 2)
Features
❏ Small Size: 45 x 92 mils
❏ High Gain: 11.5 dB
❏ Medium Power: +25 dBm, Typ P1dB
❏ Directly Cascadable – Fully Matched
❏ Unconditionally Stable
❏ Single Supply
❏ Bias Control
❏ pHEMT Technology
❏ Silicon Nitride Passivation
Specifications (TA= 25°C, Vdd= 8V)
Parameters Units Min Typ Max
Frequency Range GHz 2.0 22.0
Small Signal Gain dB 10.0 13.5
Gain Flatness ±dB 1.6
Return Loss dB -10
P1dB Variation (over operating frequency) dBm 4.5
Power Output (@1 dB Gain Compression)
1
dBm 22.5 27.5
Saturated Output Power dBm 24.0 29.0
Second Order Intercept Point dBm 40.0
Third Order Intercept Point dBm 30.0
Current mA 250 300 350
Stability
2
Unconditionally Stable
Absolute Maximum Ratings
Parameter Rating
Drain Voltage 12V
Drain Current 375 mA
Continuous Power Dissipation 3.0 W
Channel Temperature +175°C
Storage Temperature -65°C to +175°C
Mounting Temperature +320°C
Input Power +23 dBm
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutectic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (prestressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
wire.
CMM0014-BD
Chip Diagram
Notes: 1. Power may be increased by 1 dB if Bias of 7V and 350 mA is used (all source resistors bonded to ground).
2. Stability factor measured on-wafer.