CELER CFK2162-P5-000T, CFK2162-P5 Datasheet

3236 Scott Boulevard Santa Clara, California 95054 Phone: [phone] Fax: [phone]

CFK2162-P5

Features

❏ High Gain
❏ +34 dBm Power Output
❏ Proprietary Power FET Process
❏ >45% Linear Power Added Efficiency
❏ +29 dBm with 30 dBc Third Order Products
❏ Surface Mount SO-8 Power Package

Applications

❏ ISM Band Base Stations and Terminals
❏ PCS/PCN Base Stations and Terminals
❏ Wireless Local Loop

Description

The CFK2162-P5 is a high-gain FET intended for dri­ver amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels up to
+34 dBm. The device is easily matched and provides excellent

linearity at 2 Watts. Manufactured in Celeritek’s proprietary
power FET process, this device is assembled in an industry
standard surface mount SO-8 power package that is compatible
with high volume, automated board assembly techniques.

2.3 to 2.5 GHz

+34 dBm Power GaAs FET

Product Specifications
July 1997

(1 of 4)

13478652GGD

D

Back Plane
is Source

GND

GND

GND

GND

Package Diagram

Notes:

1. Sum to two tones with 1 MHz spacing = 29 dBm.

2. See thermal considerations information on page 4.

3.

Max (+Vd) and (-Vg) under linear operation. Max potential difference
across the device in RF compression (2Vd+ |-Vg|) not to exceed the mini­mum breakdown voltage (Vbr) of +18V.

Absolute Maximum Ratings

Parameter Symbol Rating

Drain-Source Voltage V

DS

12V

(3)

Gate-Source Voltage V

GS

-5V

Drain Current I

DS

Idss

Continuous Dissipation P

T

10W

Channel Temperature T

CH

175°C

Storage Temperature T

STG

-65°C to +175°C

Parameters Conditions Min Typ Max Units

Vd= 8V, Id= 800 mA (Quiescent)

P

-1dB

33.0 34.0 — dBm

SSG 11.0 12.0 — dB
3rd Order

Products

(1)

26 30 — dBc

Efficiency @ P1dB — 40 — %

Vd= 5V, Id= 350 mA (Quiescent)

P

-1dB

— 30.0 — dBm

SSG — 9.0 — dB

Vd= 5V, Id= 1200 mA (Quiescent)

P

-1dB

— 32.5 — dBm

SSG — 10.0 — dB

Specifications (TA= 25°C) The following specifications are

guaranteed at room temperature in Celeritek test fixture at 2.5 GHz.

Parameters Conditions Min Typ Max Units

g

m

Vds = 2.0V, Vgs = 0V — 1700 — mS

I

dss

Vds = 2.0V, Vgs = 0V — 2.8 — A

V

p

Vds = 3.0V, Ids = 65 mA — -1.8 Volts

BV

GD

(3) Igd = 6.5 mA 18 20 — Volts

ΘJL(2) @150°C TCH — 10 — °C/W

SO-8 Power Package Physical Dimensions

3236 Scott Boulevard, Santa Clara, California 95054
Phone: [phone] Fax: [phone]

CFK2162-P5

Product Specifications - July 1997

(2 of 4)

RF Match Data shown in the performance graphs was taken
in the test circuits shown at right and on page 3. Layout is
important for proper operation. Phase length of input and out­put 50Ω line varies as a function of exact desired frequency
of operation. Output shunt inductor effects output perfor­mance. Celeritek recommends the use of a high impedance
printed inductor Lambda/4 in length. Please contact the facto­ry for an evaluation board and/or more detailed application
support.

Typical Scattering Parameters (TA= 25°C, Vds = 5 V, Ids = 350 mA)

Frequency S

11

S

21

S

12

S

22

(GHz) Mag Ang Mag Ang Mag Ang Mag Ang

0.6 0.946 -162.45 4.973 86.73 0.017 11.14 0.739 172.95

1.0 0.946 -176.06 2.885 73.75 0.018 9.37 0.748 169.73

1.8 0.927 172.61 1.873 54.47 0.023 1.6 0.707 161.84

1.9 0.922 169.71 1.828 50.82 0.023 -0.79 0.70 158.98

1.5 0.938 178.31 2.055 63.25 0.02 4.93 0.73 167.15

2.0 0.918 166.09 1.777 46.63 0.025 -1.23 0.694 155.54

2.1 0.914 161.9 1.722 42.23 0.024 -4.64 0.69 151.93

2.2 0.912 157.79 1.664 37.59 0.026 -9.26 0.689 148.15

2.3 0.914 153.46 1.578 34.07 0.023 -17.03 0.703 143.83

2.4 0.914 148.95 1.503 29.83 0.023 -21.0 0.707 139.91

2.5 0.918 145.37 1.431 26.13 0.023 -22.87 0.714 137.02

2.6 0.921 141.59 1.344 22.16 0.022 -28.45 0.722 134.0

2.7 0.923 138.23 1.254 18.61 0.022 -28.3 0.735 131.62

3.0 0.941 132.34 1.033 10.11 0.022 -27.73 0.76 128.69

3.5 0.957 134.66 0.803 6.12 0.02 -21.78 0.787 132.92

4.0 0.94 138.76 0.803 1.66 0.023 -20.57 0.74 136.51

(TA = 25°C, Vds = 5 V, Ids = 1200 mA)

0.6 0.95 -165 5.311 84.94 0.014 13.61 0.747 17.19

1.0 0.951 -177.94 3.044 72.23 0.014 14.39 0.749 168.92

1.8 0.935 171.39 1.98 53.44 0.018 10.27 0.703 161.07

1.9 0.931 168.6 1.93 49.72 0.019 5.75 0.696 158.27

2.0 0.929 165.15 1.88 45.76 0.02 7.43 0.69 154.9

2.1 0.925 161.29 1.822 41.44 0.02 4.37 0.686 151.32

2.2 0.924 157.02 1.757 36.86 0.021 2.36 0.687 147.44

2.3 0.92 152.84 1.765 32.59 0.02 -5.07 0.679 144.99

2.4 0.923 148.35 1.673 28.03 0.021 -71.14 0.684 141.21

2.5 0.923 144.9 1.603 24.44 0.021 -9.31 0.692 138.25

2.6 0.927 141.0 1.503 20.51 0.02 -11.55 0.702 135.31

2.7 0.93 137.72 1.406 16.94 0.02 -14.27 0.711 132.91

3.0 0.947 131.72 1.09 9.25 0.018 -17.77 0.757 127.79

3.5 0.961 133.41 0.853 4.59 0.017 -13.03 0.779 131.26

4.0 0.945 137.83 0.85 0.36 0.021 -8.72 0.73 134.73

(TA = 25°C, Vds = 8 V, Ids = 800 mA)

0.6 0.941 -164.65 5.654 83.55 0.015 10.74 0.676 174.61

1.0 0.947 -177.32 3.25 70.11 0.015 8.2 0.688 171.96

1.8 0.93 171.59 2.058 49.6 0.018 6.89 0.652 165.68

1.9 0.927 168.63 2.006 45.54 0.019 3.81 0.644 163.07

2.0 0.923 165.04 1.99 41.52 0.019 -1.07 0.639 159.85

2.1 0.919 160.94 1.885 36.76 0.02 -1.68 0.635 156.23

2.2 0.917 156.65 1.714 32.35 0.02 -2.32 0.636 152.38

2.3 0.921 153.49 1.779 29.48 0.018 -14.97 0.642 148.42

2.4 0.921 149.12 1.688 24.79 0.018 -16.28 0.648 144.43

2.5 0.925 145.41 1.616 21.01 0.017 -20.8 0.656 141.59

2.6 0.927 141.65 1.518 16.92 0.017 -23.5 0.667 138.37

2.7 0.933 138.32 1.417 13.24 0.017 -25.79 0.681 136.05

3.0 0.944 131.73 1.116 3.58 0.018 -21.43 0.722 132.33

3.5 0.96 134.09 0.857 -1.39 0.016 -16.54 0.762 136.36

4.0 0.942 137.96 0.841 -6.32 0.02 -10.57 0.723 140.71

15 pF

1.8 pF

RF

OUT

RF
IN

CFK2162-P5, 5V, 350 mA

50 Ω

uuuu

V

g

uuuu

100 pF

50 Ω

0.1 µF

7.5 Ω

0.1 µF

91 Ω

100
pF

V

d

1.5 pF

1.5 pF

1.8 pF

47 nH

100 nH