3236 Scott Boulevard Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095
CFB0303
Features
❏ Low-Noise Figure from 0.8 to 2.0 GHz
❏ High Gain
❏ High Intercept Point
❏ Highly Stable
❏ Easily Matched to 50Ω
❏ 70 mil Package
❏ PHEMT Material
Applications
❏ Cellular Base Stations
❏ PCS Base Stations
❏ Industrial Data Networks
Description
Celeritek’s CFB0303 is a high performance GaAs
PHEMT with 600 µm gate width and 0.25 µ m gate length.
The low noise figure and high intercept point of this device
makes it well suited for use as the low-noise amplifier of the
High Dynamic Range
Low-Noise GaAs FET
Advanced Product Information
June 2002 (1 of 2)
base station receiver in PCS, Japanese PHS, AMPS, GSM and
other communications systems. The CFB0303 is in an industry-standard 70 mil package. It is surface mountable and
available in tape and reel.
Electrical Specifications (TA = 25°C, 2 GHz)
Parameters Conditions Min Typ Max Units
Vd= 4V, Id= 75 mA
Noise Figure
2
0.5 0.6 dB
Associated Gain
2
@ Noise Figure 19.0 20.0 22.7 dB
P
out
1, 3
P
-1
20.0 21.0 22.0 dBm
IP
3
3
+5 dBm P
OUT
/Tone 32 34 dBm
I
d
3
@ P
-1
83 mA
Transconductance Vds= 4 V, Vgs= 0 V 350 mho
Saturated Drain Current Vds= 4 V, Vgs= 0 V 80 140 240 mA
Pinchoff Voltages Vds= 4 V, Ids= 1 mA -0.3 V
Thermal Resistance @ T
case
= 150°C liquid crystal test 200 °C/W
Notes:
1. @ T
case
= 25°C. Derate 5 mW/°C for T
case
>25°C.
2. Input matched for low noise.
3. Matched for power transfer.
Typical Scattering Parameters (TA = 25°C, V
DS
= 4 V, IDS= 75 mA)
Frequency
S
11
S
21
S
12
S
22
(GHz) Mag Ang Mag (dB) Ang MAG (dB) ANG MAG ANG
0.5 0.98 -24 8.47 160 0.02 77 0.33 -9
1.0 0.94 -44 8.20 147 0.03 69 0.32 -15
2.0 0.85 -80 7.30 118 0.05 51 0.27 -36
3.0 0.76 -112 6.30 94 0.07 37 0.25 -50
4.0 0.70 -134 5.60 74 0.08 29 0.24 -55
5.0 0.64 -154 5.13 54 0.09 19 0.23 -61