CEL NE681 User Manual

查询NE681供应商

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz

• LOW NOISE FIGURE:

1.2 dB at 1 GHz

1.6 dB at 2 GHz

• HIGH ASSOCIATED GAIN:

15 dB at 1 GHz
12 dB at 2 GHz

• LOW COST

PLEASE NOTE:PLEASE NOTE:

PLEASE NOTE:

PLEASE NOTE:PLEASE NOTE:

DESCRIPTION

The following part numbersThe following part numbers

The following part numbers

The following part numbersThe following part numbers

NEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica­tions. Both the chip and micro-x versions are suitable for

from this datasheet are notfrom this datasheet are not

from this datasheet are not

from this datasheet are notfrom this datasheet are not

amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-

recommended for new design.recommended for new design.

recommended for new design.

recommended for new design.recommended for new design.

age styles. NE681's unique device characteristics allow you to
use a single matching point to simultaneously achieve both low
noise and high gain.

Please call sales office forPlease call sales office for

Please call sales office for

Please call sales office forPlease call sales office for

00 (CHIP)

18 (SOT 343 STYLE)

E

B

NE681
SERIES

35 (MICRO-X)

19 (3 PIN ULTRA
SUPER MINI MOLD)

details:details:

details:

details:details:

NE68135NE68135

NE68135

NE68135NE68135

NOISE FIGURE, GAIN MSG

AND MAG vs. FREQUENCY

CE

= 3 V, IC = 5 mA

V

MSG

3.0

2.0
NF

Minimum Noise Figure, NF min (dB)

1.0

0.5 1.0 2.0 3.0

Frequency, f (GHz)

MAG

30 (SOT 323 STYLE)

20

10

39 (SOT 143 STYLE) 39R (SOT 143R STYLE)

G

A

0

GA, MSG, MAG (dB)

and Maximum Available Gain,

Associated Gain, Maximum Stable Gain

33 (SOT 23 STYLE)

NE681 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE68100 NE68118 NE68119 NE68130

EIAJ1 REGISTERED NUMBER 2SC5012 2SC5007 2SC4227

PACKAGE OUTLINE 00 (CHIP) 18 19 30

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

fT Gain Bandwidth Product at

NF Noise Figure at VCE = 8 V, IC = 7 mA,

GNF Associated Gain at VCE = 8 V, IC = 7 mA,

21E|

|S

h

FE Forward Current Gain

ICBO Collector Cutoff Current at

IEBO Emitter Cutoff Current at

CRE

RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 80 833 1000 833

PT Total Power Dissipation mW 600 150 100 150

CE = 8 V, IC = 20 mA GHz 9.0 9.0

V
V

CE = 3 V, IC = 7 mA GHz 7.0 7.0

f = 1 GHz dB 1.2 2.5 1.4 1.5
f = 2 GHz dB 1.6 2.3 1.8 1.6

f = 1 GHz dB 14 14 13.5
f = 2 GHz dB 12 10 9

2

Insertion Power Gain at
VCE = 8 V, IC = 20 mA, f = 1 GHz dB 17 13 15 14 13

f = 2 GHz dB 9 11 9 8 7.5

2

at
VCE = 8 V, IC = 20 mA 50 100 250 50 100 250
VCE = 3 V, IC = 7 mA 80 160 40 240

VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 1.0

VEB = 1 V, IC = 0 mA µA 1.0 1.0 1.0 1.0

3

Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz pF 0.45 0.9 0.45 0.9
VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.2 0.7 0.25 0.8

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE68133 NE68135 NE68139/39R

EIAJ1 REGISTERED NUMBER 2SC3583 2SC3604 2SC4094

PACKAGE OUTLINE 33 35 39

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX

fT Gain Bandwidth Product at VCE = 8 V, IC = 20 mA GHz 9.0 9.0 9.0

VCE = 3 V, IC = 7 mA GHz

NF Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz dB 1.2 2 1.2 2

GNF Associated Gain at VCE = 8 V, IC = 7 mA,

f = 1 GHz dB 13 13.5
f = 2 GHz dB 12

|S21E|2Insertion Power Gain at VCE = 8 V, IC = 20 mA,

f = 1 GHz dB 11 12.5 15
f = 2 GHz dB 7 9 11 8.5

hFE Forward Current Gain2 at VCE= 8 V, IC = 20 mA

VCE = 3 V, IC = 7 mA 50 100 250 50 100 250 50 100 200

ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA µA 1.0 1.0 1.0

3

CRE

Feedback Capacitance at
VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.35 0.9 0.2 0.7 0.25 0.8

RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 625 590 625

PT Total Power Dissipation mW 200 295 200

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed (PW ≤ 350 ms, duty cycle ≤ 2 %).

3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

f = 2 GHz dB 1.6 2.3

NE681 SERIES

ABSOLUTE MAXIMUM RATINGS

SYMBOLS PARAMETERS UNITS RATINGS

V

CBO Collector to Base Voltage V 20

VCEO Collector to Emitter Voltage V 10
VEBO Emitter to Base Voltage V 1.5

IC Collector Current mA 65

J Operating Junction

T

TSTG Storage Temperature °C -55 to +150

Notes:

1. Operation in excess of any one of these parameters may result
in permanent damage.

2. TJ for NE68135 and NE68100 is 200°C.

3. Maximum storage temperature for the NE68135 is

-65 to +150°C.

Temperature °C 150

1

(TA = 25°C)

2

NE68119
TYPICAL NOISE PARAMETERS (TA = 25°C)

ΓΓ

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 2.5 V, IC = 0.3 mA

500 1.24 9.26 0.73 42 1.70
800 1.67 6.95 0.74 72 1.01

1000 2.18 6.02 0.70 90 0.78

VCE = 2.5 V, IC = 1 mA

500 0.97 13.86 0.66 43 0.46
800 1.19 9.12 0.59 48 0.35

1000 1.31 10.09 0.56 89 0.30
1500 1.71 7.99 0.50 131 0.16

VCE = 2.5 V, IC = 3 mA

500 0.92 17.19 0.49 39 0.28
800 1.02 14.23 0.40 68 0.17

1000 1.11 12.78 0.38 87 0.14
1500 1.42 10.30 0.39 134 0.08
2000 1.82 8.24 0.36 165 0.11

VCE = 3 V, IC = 5 mA

500 1.00 19.00 0.37 43 0.20
800 1.10 15.57 0.31 71 0.15

1000 1.19 13.91 0.30 89 0.13
1500 1.40 11.25 0.33 139 0.09
2000 1.70 9.08 0.32 166 0.11
2500 2.05 7.62 0.36 -163 0.13

VCE = 8 V, IC = 7 mA

500 1.10 20.30 0.36 39 0.22
800 1.20 16.82 0.28 64 0.16

1000 1.30 15.10 0.28 81 0.14
1500 1.50 12.35 0.28 130 0.11
2000 1.77 10.21 0.28 158 0.12
2500 2.10 8.85 0.33 -166 0.14
3000 2.40 7.86 0.44 -141 0.16

Γ

OPT

ΓΓ

NE68100
TYPICAL NOISE PARAMETERS

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 8 V, IC = 7 mA

500 1.3 26.42 0.20 91 0.20

1000 1.45 20.54 0.20 148 0.21

3

2000 2.1 14.41 0.22 178 0.51
4000 3.25 7.76 0.42 -115 0.85

ΓΓ

ΓOPT

ΓΓ

(TA = 25°C)

NE68130
TYPICAL NOISE PARAMETERS

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 2.5 V, IC = 0.3 mA

500 1.48 10.23 0.74 43 1.35

800 1.90 10.15 0.72 79 0.92
1000 2.15 9.00 0.69 99 0.60
1500 2.70 4.46 0.66 126 0.38

VCE = 2.5 V, IC = 1 mA

500 1.10 14.69 0.65 45 0.42

800 1.26 12.73 0.60 80 0.30
1000 1.40 11.29 0.56 99 0.24
1500 1.80 7.40 0.53 123 0.17
2000 2.22 6.14 0.47 166 0.12
2500 2.75 4.89 0.49 -166 0.08

VCE = 2.5 V, IC = 3 mA

500 1.00 17.28 0.47 44 0.25

800 1.06 14.35 0.44 83 0.21
1000 1.16 12.69 0.43 100 0.17
1500 1.46 9.50 0.39 130 0.12
2000 1.80 7.70 0.35 177 0.11
2500 2.15 6.03 0.35 -177 0.09

VCE = 8 V, IC = 7mA

500 1.30 20.34 0.29 50 0.27

1000 1.40 13.96 0.25 84 0.18
2000 1.80 8.56 0.25 155 0.16
3000 2.50 5.64 0.48 -167 0.10
4000 3.60 4.50 0.67 -135 0.20

ΓΓ

OPT

Γ

ΓΓ

(TA = 25°C)

NE68135
TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 8 V, IC = 7 mA

1000 1.1 17.33 0.28 71 0.22
2000 1.6 13.60 0.37 160 0.15
4000 3.4 9.25 0.51 -139 0.27

ΓΓ

ΓOPT

ΓΓ

NE681 SERIES

NE68133
TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 2.5 V, IC = 0.3 mA

500 1.21 12.45 0.75 47 1.15

800 1.69 7.72 0.74 72 0.97
1000 1.95 5.96 0.68 88 0.71
1500 2.52 3.12 0.63 122 0.34

VCE = 2.5 V, IC = 1.0 mA

500 .92 14.52 0.68 47 0.42

800 1.20 10.57 0.63 70 0.34
1000 1.35 9.29 0.57 87 0.30
1500 1.71 6.53 0.50 120 0.17
2000 2.00 5.53 0.44 168 0.11

VCE = 2.5 V, IC = 3 mA

500 0.86 16.37 0.54 47 0.24

800 1.00 12.41 0.51 67 0.20
1000 1.08 11.07 0.46 86 0.18
1500 1.25 8.61 0.36 128 0.12
2000 1.40 6.99 0.35 172 0.10

ΓΓ

ΓOPT

ΓΓ

NE68139
TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 2.5 V, IC = 0.3 mA

500 1.20 14.10 0.78 47 1.28
800 1.45 8.42 0.75 72 0.84

1000 1.67 8.37 0.68 95 0.56

CE = 2.5 V, IC = 1 mA

V

500 0.90 15.71 0.63 44 0.43

800 1.10 12.30 0.56 72 0.26
1000 1.26 11.66 0.53 98 0.20
1500 1.70 8.85 0.49 145 0.12
2000 2.20 7.12 0.57 178 0.07

VCE = 2.5 V, IC = 3 mA

500 0.88 18.20 0.45 44 0.25

800 1.00 14.62 0.39 73 0.19
1000 1.08 13.29 0.37 99 0.16
1500 1.30 10.54 0.35 151 0.09
2000 1.80 8.60 0.43 -177 0.07

V

CE = 8 V, IC = 7 mA

500 1.15 20.50 0.26 42 0.17
1000 1.25 15.62 0.16 133 0.14
1500 1.4 12.49 0.20 176 0.09
2000 1.6 10.48 0.31 -165 0.14
3000 2.15 8.00 0.53 -123 0.48
4000 3.0 6.81 0.71 -101 0.90

ΓΓ

ΓOPT

ΓΓ

TYPICAL PERFORMANCE CURVES (TA = 25°C)

FORWARD INSERTION GAIN

AND MAXIMUM AVAILABLE GAIN

30

25

(dB)

2

|

20

21E

15

10

Insertion Gain, |S

Maximum Available Gain, MAG (dB)

NE68133

5

0

0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10

vs. FREQUENCY

|S

21E

MAG

2

|S

21E

|

MAG

Frequency, f (GHz)

2

|

VCE = 8 V
I

C

= 20 mA

NE68100
NE68135

NE68100 & NE68135

INSERTION GAIN vs.

COLLECTOR CURRENT

12

VCE = 8 V

10

(dB)

2

|

8

21E

6

4

Insertion Gain, |S

2

0

1 2 3 5 7 10 20 30 50

Collector Current, IC (mA)

f = 2 GHz

f = 3 GHz

f = 4 GHz

NE681 SERIES
TYPICAL PERFORMANCE CURVES (TA = 25°C)

DC POWER DERATING CURVES

400

(mW)

T

300

200

100

NE68133

Total Power Dissipation, P

0

0 50 100 150 200

Ambient Temperature, T

FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT

500

300

FE

200

NE68135

A (°C)

VCE = 8 V

COLLECTOR TO BASE CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

5.0

pF)

3.0

OB (

2.0

1.0

0.7

0.5

0.3

0.2

Collector to Base Capacitance, C

0.1
1 2 3 5 7 10 20 30 50

Collector to Base Voltage, VCB (V)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

50

30

(GHz)

20

T

NE68133
NE68135

V

CE

= 8 V

100

70
50

30
20

DC Forward Current Gain, h

10

1 2 3 5 7 10 20 30 50

Collector Current, IC (mA)

NE68133

NOISE FIGURE

vs. COLLECTOR CURRENT

3.0

2.5

2.0

1.5

1.0

Noise Figure, NF (dB)

0.5

VCE = 8 V
f = 1 GHz

10

7
5

3
2

Gain Bandwidth Product, f

1

1 2 3 5 7 10 20 30 50

Collector Current, IC (mA)

NE68100 & NE68135

NOISE FIGURE

vs. COLLECTOR CURRENT

3.0

2.5

2.0

1.5

1.0

V
f = 2 GHz

Noise Figure, NF (dB)

0.5

CE

= 8 V

0

1 2 3 5 7 10 20 30 50

Collector Current, IC (mA)

0

1 2 3 5 7 10 20 30 50

Collector Current, IC (mA)

TYPICAL COMMON EMITTER SCATTERING PARAMETERS

NE681 SERIES

j25

j10

0

10 25 50 100

S

22

17 GHz

-j10

-j25

NE68100
VCE = 8 V, IC = 7 mA

j50

S

11

17 GHz

-j50

j100

S

11

0.1 GHz

-j100

0

S

22

0.1 GHz

Coordinates in Ohms

Frequency in GHz

(VCE = 8 V, IC = 7 mA)

180˚

150˚

-150˚

120˚

S

21

0.1 GHz

-120˚

S

12

0.1 GHz

S

21

90˚

10
15
20

25

-90˚

S

21

17 GHz

60˚

S

12

17 GHz

-60˚

FREQUENCY S11 S21 S12 S22 K MAG

(MHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)

100 0.827 -20.8 19.513 163.9 0.012 88.3 0.964 -7.0 0.03 32.1
200 0.809 -49.5 17.981 151.0 0.022 65.5 0.894 -16.8 0.13 29.1

500 0.742 -101.1 12.631 123.0 0.038 42.2 0.691 -27.4 0.28 25.2
1000 0.701 -139.2 7.498 101.5 0.047 36.7 0.536 -29.0 0.47 22.0
1500 0.689 -156.6 5.182 90.4 0.049 33.0 0.483 -28.6 0.71 20.2
2000 0.686 -167.2 3.959 82.0 0.053 35.0 0.461 -29.2 0.88 18.7
3000 0.687 179.8 2.687 69.7 0.061 45.9 0.447 -33.6 1.11 14.4
4000 0.693 172.2 2.048 59.1 0.071 48.7 0.449 -40.6 1.21 11.8
5000 0.699 166.6 1.662 49.8 0.081 53.2 0.454 -48.0 1.27 10.0
6000 0.708 162.1 1.431 41.1 0.096 57.0 0.473 -57.1 1.15 9.4
7000 0.717 157.0 1.250 31.7 0.116 56.6 0.490 -66.8 0.99 10.3
8000 0.721 151.7 1.105 23.3 0.125 56.9 0.519 -76.0 0.97 9.5
9000 0.725 145.5 0.989 14.2 0.146 55.9 0.549 -86.4 0.83 8.3

10000 0.726 137.6 0.868 5.9 0.169 54.9 0.582 -96.0 0.74 7.1
11000 0.724 131.2 0.773 -2.0 0.179 51.9 0.621 -104.8 0.71 6.4
12000 0.722 123.6 0.673 -9.7 0.192 49.0 0.663 -114.1 0.69 5.4

0.50.40.30.20.1

30˚

0˚

-30˚

1

VCE = 8 V, IC = 20 mA

100 0.665 -47.0 38.130 154.1 0.011 90.0 0.885 -15.0 0.01 35.4
200 0.664 -85.3 31.089 135.9 0.017 70.3 0.753 -26.0 0.12 32.6

500 0.663 -135.8 16.975 108.9 0.025 45.4 0.504 -30.8 0.45 28.3
1000 0.663 -161.1 9.066 93.2 0.028 49.5 0.404 -27.0 0.82 25.1
1500 0.667 -171.7 6.113 84.9 0.036 49.6 0.377 -26.3 0.97 22.3
2000 0.669 -178.4 4.627 78.3 0.042 53.2 0.369 -26.6 1.10 18.5
3000 0.676 172.7 3.112 67.9 0.054 59.2 0.361 -31.6 1.25 14.6
4000 0.686 167.3 2.361 58.6 0.071 62.6 0.362 -38.5 1.21 12.5
5000 0.693 162.6 1.913 50.1 0.086 63.5 0.372 -45.8 1.19 10.8
6000 0.705 159.0 1.643 42.2 0.103 65.1 0.386 -55.5 1.08 10.3
7000 0.719 154.5 1.433 33.3 0.123 63.2 0.405 -65.0 0.94 10.7
8000 0.727 149.4 1.266 25.4 0.133 60.6 0.433 -74.2 0.91 9.8
9000 0.726 143.5 1.134 16.7 0.153 60.4 0.464 -84.5 0.84 8.7

10000 0.733 135.9 1.001 8.4 0.171 57.3 0.500 -94.4 0.76 7.7
11000 0.732 129.4 0.897 0.5 0.185 53.9 0.546 -103.2 0.71 6.9
12000 0.728 122.1 0.787 -7.1 0.197 51.8 0.587 -112.6 0.72 6.0

S-Parameters include bond wires.
BASE: Total 1 wire (s), 1 per bond pad, 0.0122" (309 µm) long each wire.
COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.008" (203 µm) long each wire.
EMITTER: Total 2 wire (s), 1 per side, 0.0194" (494 µm) long each wire.
WIRE: 0.0007" (17.7 µm) dia., gold.
Note:

1. Gain Calculations:

MAG =

21

|

|S

12

|

|S

(

K ±

2

K - 1

).

When K ≤ 1, MAG is undefined and MSG values are used.

MAG = Maximum Available Gain
MSG = Maximum Stable Gain

MSG =

|S

21

|

, K =

|S

12

|

2

1 + | ∆ | - |S

2 |S

12 S21

2

11

| - |S22|

|

2

∆ = S

,

11 S22

- S21 S

12