CEL NE680 User Manual

查询NE680供应商

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz

• LOW NOISE FIGURE:

1.7 dB at 2 GHz

2.6 dB at 4 GHz

• HIGH ASSOCIATED GAIN:

12.5 dB at 2 GHz

8.0 dB at 4 GHz

• EXCELLENT LOW VOLTAGE
LOW CURRENT PERFORMANCE

DESCRIPTION

NEC's NE680 series of NPN epitaxial silicon transistors is
designed for low noise, high gain and low cost applications.
Both the chip and micro-x versions are suitable for applications
up to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
fT makes it ideal for low voltage/low current applications, down
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 series.

PLEASE NOTE:PLEASE NOTE:

PLEASE NOTE:

PLEASE NOTE:PLEASE NOTE:

The following part numbersThe following part numbers

The following part numbers

The following part numbersThe following part numbers

from this datasheet are notfrom this datasheet are not

from this datasheet are not

from this datasheet are notfrom this datasheet are not

B

00 (CHIP)

18 (SOT 343 STYLE)

NE680
SERIES

E

35 (MICRO-X)

19 (3 PIN ULTRA
SUPER MINI MOLD)

recommended for new design.recommended for new design.

recommended for new design.

recommended for new design.recommended for new design.

Please call sales office forPlease call sales office for

Please call sales office for

Please call sales office forPlease call sales office for

details:details:

details:

details:details:

NOISE FIGURE & ASSOCIATED GAIN

2.5

2.0

1.5

Noise Figure, NF (dB)

1.0

.5

300 500 1000 2000 3000

NE68018

vs. FREQUENCY

NE68035NE68035

NE68035

NE68035NE68035

6V, 5 mA
3V, 5 mA

Frequency, f (GHz)

25

20

15

(dB)

A

10

5

Associated Gain, G

30 (SOT 323 STYLE)

39 (SOT 143 STYLE)

33 (SOT 23 STYLE)

39R (SOT 143R STYLE)

California Eastern Laboratories

NE680 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE68000 NE68018 NE68019

1

EIAJ

REGISTERED NUMBER 2SC5013 2SC5008

PACKAGE OUTLINE 00 (CHIP) 18 19

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX

fT Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10

NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.6 1.7

GNF Associated Gain at VCE = 6 V, IC = 5 mA,

MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA

2

|S21E|

hFE Forward Current Gain2 at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250

ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0
IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA µA 1.0 1.0 1.0

CRE

PT Total Power Dissipation mW 400 150 100

RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 833 1000

RTH (J- C) Thermal Resistance (Junction to Case) °C/W 120 200 200

Insertion Power Gain at VCE = 6 V, IC = 10 mA,

VCE = 3 V, IC = 5 mA 80 160

3

Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.3 0.7 0.3 0.7

f = 2 GHz dB 1.7 2.4 1.8 3 1.9
f = 4 GHz dB 2.6

f = 1 GHz dB 14 13.5
f = 2 GHz dB 12.5 10.2 9.6
f = 4 GHz dB 8

f = 1 GHz dB 18.5 19 18.5
f = 2 GHz dB 16.2 12.7 11.8
f = 4 GHz dB 10.2 8.2 7.3

f = 1 GHz dB 17 15.5 15
f = 2 GHz dB 10.5 12.5 7.5 9.8 9.2
f = 4 GHz dB 7.5 4.6 4.4

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE68030 NE68033 NE68035 NE68039/39R

EIAJ1 REGISTERED NUMBER 2SC4228 2SC3585 2SC3587 2SC4095

PACKAGE OUTLINE 30 33 35 39

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

fT Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz 10 10 10 10

NF Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz dB 1.5 1.6

GNF Associated Gain at VCE = 6 V, IC = 5 mA,

MAG Maximum Available Gain at VCE = 6 V, IC = 10 mA

2

|S21E|

hFE Forward Current Gain2 at VCE = 6 V, IC = 10 mA 50 100 250 50 100 250 50 100 250

ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 1.0
IEBO Emitter Cutoff Current at VEB = 1V, IC = 0 mA µA 1.0 1.0 1.0 1.0

Cre

PT Total Power Dissipation mW 150 200 290 200

RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 833 620 550 620

RTH (J- C) Thermal Resistance (Junction to Case) °C/W 200 200 200 200

Insertion Power Gain at VCE = 6 V, IC = 10 mA,

VCE = 3 V, IC = 5 mA 50 100 250

3

Feedback Capacitance at
VCB = 3V, IE = 0 mA, f = 1 MHz pF 0.3 0.7
VCE = 10 V, IE = 0 mA, f = 1 MHz pF 0.3 0.8 0.2 0.7 0.25 0.8

f = 2 GHz dB 1.7 1.8 3.0 1.7 2.4 1.7 2.5
f = 4 GHz dB 2.9 2.1 2.6 2.6

f = 1 GHz dB 12.5 11.0
f = 2 GHz dB 9.4 9.0 12.5 11
f = 4 GHz dB 5.3 4.2 8 6.5

f = 1 GHz dB 17 17 18.5 18
f = 2 GHz dB 10.9 10.9 16.2 12.4
f = 4 GHz dB 6.8 6.7 10.2 8.7

f = 1 GHz dB 13.5 13 17 14.5
f = 2 GHz dB 8.5 6.7 10.5 12.5 9.6
f = 2 GHz dB 3.6 3.7 7.5 4.9

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, PW≤350 µs, duty cycle ≤2%.

3. The emitter terminal should be connected to the ground
terminal of the 3 terminal capacitance bridge.

NE680 SERIES

ABSOLUTE MAXIMUM RATINGS

1

(TA = 25°C)

SYMBOLS PARAMETERS UNITS RATINGS

VCBO Collector to Base Voltage V 20
VCEO Collector to Emitter Voltage V 10

EBO Emitter to Base Voltage V 1.5

V

I

C Collector Current mA 35

J Junction Temperature °C 150

T

2

TSTG Storage Temperature °C -65 to +150

Notes:

1. Operation in excess of any one of these parameters may result in
permanent damage.

2. Maximum T

J for the NE68035 is 200°C.

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE68035

INSERTION GAIN vs.

COLLECTOR CURRENT

14
13

12

11

(dB)

2

|

10

21

9
8
7
6
5

Insertion Gain, |S

4
3

2

1 2 3 5 7 10 20 30 50 70 100

VCE = 6 V

f = 2 GHz

f = 3 GHz

f = 4 GHz

DC POWER DERATING CURVES

400

(mW)

T

300

200

100

NE68033
NE68039

NE68019

NE68035

Total Power Dissipation, P

0

50 100 150 200

0

Ambient Temperature, T

INSERTION GAIN vs.

COLLECTOR CURRENT

12

10

(dB)

2

|

8

21

6

4

Insertion Gain, |S

2

0

1 2 3 5 7 10 20 30 50 70 100

NE68033

NE68033

A (°C)

VCE = 6 V
f = 2 GHz

Collector Current, IC (mA)

NE68039

FORWARD INSERTION GAIN

AND MAXIMUM AVAILABLE

GAIN vs. FREQUENCY

30

2

25

(dB)

2

|

20

21

15

10

Insertion Gain, |S

5

Maximum Available Gain, MAG (dB)

0

|S21|

0.3 0.5 0.7 1 2 3 5 7 10

0.1 0.2

MAG

Frequency, f (GHz)

Collector Current, IC (mA)

NE68035

FORWARD INSERTION GAIN

AND MAXIMUM AVAILABLE

GAIN vs. FREQUENCY

30

25

(dB)

2

|

20

21

15

10

Insertion Gain, |S

5

Maximum Available Gain, MAG (dB)

0

0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10

|S21|

Frequency, f (GHz)

V

CE

= 6 V

I

C

= 10 mA

2

MAG

NE680 SERIES

TYPICAL PERFORMANCE CURVES

FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT

500

300

FE

200

100

70
50

30
20

DC Forward Current Gain, h

10

1 2 3 5 7 10 20 30 50

Collector Current, IC (mA) Collector Current, IC (mA)

NE68035

NOISE FIGURE

vs. COLLECTOR CURRENT

5

4

3

VCE = 6 V

VCE = 6 V

f = 4 GHz

(TA = 25°C)

NOISE FIGURE vs. COLLECTOR

NE68033

CURRENT

5

4

3

2

Noise Figure, NF (dB)

1

0

1 2 3 5 7 10 20

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

10

7

(GHz)

T

5

VCE = 6 V
f = 2 GHz

VCE = 6 V

2

Noise Figure, NF (dB)

1

0

1 2 3 5 7 10 20

f = 2 GHz

Collector Current, IC (mA)

COLLECTOR TO BASE CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

5

(pF)

3

OB

2

1

0.7

0.5

0.3

0.2

0.1

Collector to Base Capacitance, C

1 2 3 5 7 10 20 30 50

Collector to Base Voltage, VCB (V)

3

2

Gain Bandwidth Product, f

1

1 2 3 5 7 10 20

Collector Current, IC (mA)

NE68033

NE68035

NE680 SERIES

NE68018
TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

V

CE = 3 V, IC = 5 mA

500 1.45 20.74 0.46 22 0.41
800 1.50 17.44 0.39 44 0.32

1000 1.55 15.79 0.34 54 0.29
2000 1.90 9.96 0.24 76 0.26
3000 2.40 7.26 0.16 130 0.12

VCE = 6 V, IC = 5 mA

500 1.5 21.20 .47 21 0.44
800 1.6 17.50 .38 36 0.31

1000 1.6 15.63 .44 47 0.43
2000 2.1 10.20 .32 81 0.27
3000 2.4 7.49 .19 125 0.14

ΓΓ

ΓOPT

ΓΓ

NE68019
TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 3 V, IC = 5mA

500 1.36 19.2 0.52 18 0.47
800 1.47 15.7 0.48 33 0.33

1000 1.55 14.0 0.46 41 0.31
1500 1.71 11.0 0.42 58 0.27
2000 1.88 9.0 0.32 75 0.22
2500 2.06 7.4 0.27 86 0.18
3000 2.29 6.0 0.22 103 0.12

VCE = 6 V, IC = 5 mA

500 1.36 19.44 0.56 16 0.50
800 1.47 15.86 0.54 30 0.36

1000 1.55 14.16 0.52 39 0.33
1500 1.71 11.15 0.48 58 0.30
2000 1.88 9.49 0.36 77 0.27
2500 2.06 7.89 0.30 88 0.23
3000 2.29 6.74 0.24 103 0.17

ΓΓ

ΓOPT

ΓΓ

NE68035
TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 6 V, IC = 5 mA

1000 1.2 19.21 0.30 65 0.37
2000 1.7 14.49 0.20 155 0.30
4000 2.6 9.12 0.22 -128 0.33

ΓΓ

ΓOPT

ΓΓ

NE68030
TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ. NF

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 2.5 V, IC = 3 mA

500 1.32 12.79 0.79 21 1.60

800 1.48 12.59 0.72 40 1.43
1000 1.58 11.35 0.69 52 1.08
1500 1.82 5.87 0.64 64 0.92
2000 2.12 3.48 0.59 78 0.75

VCE = 6 V, IC = 5 mA

1000 1.52 16.93 0.46 126 0.15
2000 1.76 10.70 0.37 -159 0.11
3000 2.25 7.56 0.36 -132 0.14
4000 2.92 5.82 0.35 -115 0.16

OPT GA

ΓΓ

ΓOPT

ΓΓ

NE68033
TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 2.5 V, IC = 3 mA

500 1.10 18.26 0.65 21 0.56

800 1.20 14.56 0.60 32 0.42
1000 1.27 13.26 0.52 43 0.39
1500 1.43 9.80 0.47 48 0.36
2000 1.64 7.76 0.39 53 0.32

VCE = 6 V, IC = 5 mA

500 1.35 19.25 0.60 17 0.60
1000 1.45 14.20 0.45 33 0.48
2000 1.70 9.18 0.22 42 0.45
3000 2.10 6.60 0.11 -4 0.40
4000 2.55 5.22 0.18 -63 0.47

ΓΓ

ΓOPT

ΓΓ

NE68039
TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ. NFOPT GA

(MHz) (dB) (dB) MAG ANG Rn/50

VCE = 2.5 V, IC = 3 mA

500 1.14 19.29 0.54 18 0.41

800 1.21 15.55 0.47 28 0.35
1000 1.26 14.04 0.42 39 0.29
1500 1.40 10.98 0.31 55 0.25
2000 1.62 9.34 0.16 97 0.19

VCE = 6 V, IC = 5 mA

500 1.5 20.60 0.52 3 0.52
1000 1.6 15.91 0.38 29 0.40
2000 1.7 10.82 0.18 81 0.26
3000 2.1 8.49 0.17 -158 0.29
4000 2.6 7.21 0.40 -116 0.31

ΓΓ

ΓOPT

ΓΓ

NE680 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)

1

.8

.6

.4

.2

0

S

11

3 GHz

-.2

-.4

-.6

-.8

1.5
2

3

S

11

-2

S

22

0.1 GHz

-3

4

5

10

20

20101.5.8.6.4.2 54321

-20

-10

-5

-4

Coordinates in Ohms

Frequency in GHz

(VCE = 2.5 V, IC = 1 mA)

S

22

3 GHz

0.1 GHz

-1.5

-1

135˚ 45˚

S21

180˚

3 GHz

225˚

90˚

S12

0.1 GHz
S21

0.1 GHz

2.5

270˚

NE68018
VCE = 2.5 V, IC = 1 mA

FREQUENCY S11 S21 S12 S22 K MAG

(MHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)

100 .972 -9.4 3.605 170.2 .017 81.6 .995 -3.5
400 .907 -34.2 3.315 146.5 .061 65.5 .966 -20.2

800 .778 -65.1 2.897 118.1 .104 45.6 .874 -37.5
1000 .706 -78.9 2.678 105.8 .114 38.1 .841 -44.3
1500 .561 -111.0 2.173 78.7 .135 21.4 .755 -58.4
2000 .457 -139.5 1.800 56.6 .147 11.8 .712 -70.4
2500 .389 -166.6 1.545 37.3 .145 4.8 .668 -80.5
3000 .356 167.0 1.358 20.7 .150 2.4 .651 -90.6

0.12 23.3

0.19 17.4

0.35 14.4

0.42 13.7

0.65 12.1

0.82 10.9

1.08 8.5

1.20 6.9

VCE = 2.5 V, IC = 3 mA

100 .884 -12.9 9.246 166.6 .018 77.7 .964 -8.5
400 .729 -52.2 7.715 132.3 .056 58.5 .864 -27.8

800 .507 -90.1 5.509 101.2 .073 41.2 .704 -43.7
1000 .430 -105.8 4.722 89.8 .087 38.3 .657 -48.3
1500 .312 -138.0 3.398 66.8 .110 35.6 .591 -58.8
2000 .259 -167.5 2.645 48.2 .120 27.1 .561 -69.0
2500 .231 164.8 2.189 31.5 .137 23.2 .544 -78.5
3000 .223 139.5 1.876 16.9 .165 18.5 .539 -87.7

0.19 27.1

0.34 21.4

0.63 18.8

0.71 17.3

0.88 14.9

1.07 11.8

1.15 9.7

1.13 8.4

VCE = 6 V, IC = 5 mA

100 .838 -17.7 13.662 163.3 .012 80.3 .965 -9.5
400 .610 -61.4 10.216 124.3 .037 61.1 .819 -28.3

800 .381 -99.4 6.605 94.4 .063 48.9 .661 -40.1
1000 .314 -114.8 5.516 83.9 .067 47.8 .630 -43.7
1500 .223 -149.1 3.855 63.0 .092 43.1 .587 -54.1
2000 .188 -178.0 2.963 45.9 .112 34.0 .569 -63.6
2500 .185 153.8 2.417 30.3 .130 33.0 .567 -72.1
3000 .173 129.0 2.063 16.4 .155 23.5 .563 -82.5

0.13 30.6

0.42 24.4

0.73 20.2

0.85 19.2

0.97 16.2

1.07 12.6

1.10 10.8

1.10 9.3

0.1 0.2

S12

3 GHz

315˚

0˚

1

Note:

1.Gain Calculations:

MAG =

21

|

|S

(

|S

12

|

K ±

2

K - 1

MAG = Maximum Available Gain
MSG = Maximum Stable Gain

).

When K ≤ 1, MAG is undefined and MSG values are used.

MSG =

|S

21

|

, K =

|S

12

|

2

1 + | ∆ | - |S

2 |S

12 S21

11

2

| - |S22|

|

2

∆ = S

,

11 S22

- S21 S

12