CEL NE677M04 User Manual

查询NE677M04供应商

NEC's MEDIUM POWER

NPN SILICON HIGH FREQUENCY

FEATURES

• HIGH GAIN BANDWIDTH:

T = 15 GHz

f

• HIGH OUTPUT POWER:
P-1dB = 15 dBm at 1.8 GHz

• HIGH LINEAR GAIN:

G

L

= 15.5 dB at 1.8 GHz

• NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance

DESCRIPTION

NEC's NE677M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 15 GHz, the NE677M04
is usable in applications from 100 MHz to 3 GHz. The NE677M04
provides P1dB of 15 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.

NEC's NE677M04 is housed in NEC's new low profile/flat lead
style "M04" package

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE677M04

PACKAGE OUTLINE M04

EIAJ3 REGISTRATION NUMBER 2SC5751

TRANSISTOR

2.05±0.1

+0.30

-0.05

1.25±0.1

+0.40

2

2.0±0.1

0.65

1.25

0.65

1

+0.30

0.59±0.05

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

+0.01

-0.05

NE677M04

R54

3

0.65

0.65

4

(leads 1, 3 and ,4)

1.30

+0.1

+0.11

-0.05

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 100
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100

DC

hFE DC Current1 Gain at VCE = 3 V, IC = 20 mA 75 120 150

P1dB Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA, dBm 15.0

GL Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm dB 15.5

MAG Maximum Available Gain4 at VCE = 3 V, IC = 20 mA, f = 2 GHz dBm 16.0

RF

|S21E|

ηc Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, % 50

NF Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT dB 1.7 2.5

fT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz GHz 15

Cre Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz pF 0.22 0.50

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the

guard pin of capacitance meter.

3. Electronic Industrail Association of Japan

21

|S

MAG =

4.

|S12|

f = 1.8 GHz, Pin = 1 dBm

2

Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz dB 10.0 13.5

Pin = 1 dBm

K ±

2

K - 1

).

|

(

California Eastern Laboratories

NE677M04

ABSOLUTE MAXIMUM RATINGS

1

(TA = 25°C)

SYMBOLS PARAMETERS UNITS RATINGS

VCBO Collector to Base Voltage V 9.0
VCEO Collector to Emitter Voltage V 6.0

EBO Emitter to Base Voltage V 2.0

V

IC Collector Current mA 50

P

T Total Power Dissipation

2

mW 205

TJ Junction Temperature °C 150

STG Storage Temperature °C -65 to +150

T

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB.

TYPICAL PERFORMANCE CURVES (TA = 25 °C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

(mW)

out

300

250

200

150

100

Mounted on Glass Epoxy PCB

2

x 1.0 mm (t) )

(1.08 cm

ORDERING INFORMATION

PART NUMBER QUANTITY

NE677M04-T2 3k pcs./reel

THERMAL RESISTANCE

SYMBOLS PARAMETERS UNITS RATINGS

Rth j-a Thermal Resistance from °C/W 600

Note:

1. Mounted on a 1.08cm

(pF)

re

Junction to Ambient

2

x 1.0 mm thick glass epoxy PCB.

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

0.5

0.4

0.3

0.2

f = 1MH

z

50

Total Power Dissipation P

0255075100125150

Ambient Temperature TA (ºC)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

60

400 µA

(mA)

C

500 µA

50

40

30

20

Collector Current I

10

012345678

IB: 50 µA step

300 µA

200 µA

100 µA

IB: 50 µA

500 µA

Collector to Emitter Voltage VCE (V)

0.1

Reverse Transfer Capacitance C

0123456

Collector to Base Voltage VCB (V)

DC CURRENT GAIN

vs. COLLECTOR CURRENT

000

)

FE

100

VCE = 3 V

DC Current Gain (h

010

0.1

1

10

Collector Current IC (mA)

100

TYPICAL PERFORMANCE CURVES (TA = 25 °C)

NE677M04

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

15

VCE = 3 V
f = 2 GHz

(GHz)

T

10

5

Gain Bandwidth Product f

0

110100

Collector Current IC (mA)

INSERTION POWER GAIN,

MAG, MSG vs. COLLECTOR CURRENT

25

VCE = 3 V
f = 1 GHz

20

, (dB)

2

|

21e

15

MSG

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

, (dB)

2

|

21e

35

MSG

25

MAG

VCE = 3 V

c

= 20 mA

I

20

15

2

|S

21e

10

Insertion Power Gain |S

5

Maximum Stable Power Gain MSG (dB)

0

Maximum Available Power Gain MAG (dB)

0.1 1 10

|

Frequency f (mA)

INSERTION POWER GAIN,

MAG, MSG vs. COLLECTOR CURRENT

, (dB)
|

21e

25

VCE = 3 V
f = 2 GHz

20

MSG

15

MAG

MAG

2

2

21e

|

|S

10

5

Insertion Power Gain |S

Maximum Stable Power Gain MSG (dB)

0

Maximum Available Power Gain MAG (dB)

110100

Collector Current IC (mA)

INSERTION POWER GAIN,

MAG vs. COLLECTOR CURRENT

25

VCE = 3 V
f = 2.5 GHz

20

, (dB)

2

|

21e

15

10

5

MAG

|S

21e

2

|

Insertion Power Gain |S

0

Maximum Available Power Gain MAG (dB)

110100

Collector Current IC (mA)

2

|S

21e

10

5

|

Insertion Power Gain |S

Maximum Stable Power Gain MSG (dB)

0

Maximum Available Power Gain MAG (dB)

110100

Collector Current IC (mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

8

V

CE

= 3 V

f = 2 GHz

G

a

6

4

Noise Figure NF (dB)

NF

0

110100

Collector Current IC (mA)

16

12

(dB)

a

8

42

Associated Gain G

0

NE677M04

TYPICAL PERFORMANCE CURVES (TA = 25 °C)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

25

G

P

20

(dbm)

(dB)

p

out

15

10

Power Gain G

Output Power P

5

0

-20 -15 -10 -5 0 5

P

out

V

CE

f = 0.9 GHz
I

cq

= 8 mA (RF OFF)

η

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

25

20

(dbm)

(dB)

p

out

15

G

P

V

CE

= 3.2 V
f = 1.8 GHz
I

cq

= 8 mA (RF OFF)

= 3.2 V

c

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

250

200

(mA),

C

150

100

Collector Current I

50

I

c

Collector Efficiency ηc (%)

0

25

20

G

(dbm)

(dB)

p

out

P

15

10

Power Gain G

Output Power P

5

0

V

CE

= 2.8 V
f = 1.8 GHz
I

cq

= 8 mA (RF OFF)

P

out

η

c

250

200

(mA),

C

150

100

Collector Current I

50

I

c

0

10-15 -10 -5 0 5

Collector Efficiency ηc (%)

Input Power Pin (dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

250

200

150

(mA),

C

25

20

(dbm)

(dB)

p

out

15

V

CE

= 3.2 V
f = 2.4 GHz
I

cq

= 8 mA (RF OFF)

G

P

250

200

150

(mA),

C

10

Power Gain G

Output Power P

5

0

P

out

η

c

Input Power Pin (dBm)

100

Collector Current I

50

I

c

0

10-15 -10 -5 0 5

Collector Efficiency ηc (%)

10

Power Gain G

Output Power P

5

0

P

out

η

c

100

Collector Current I

50

I

c

0

10-15 -10 -5 0 5

Collector Efficiency ηc (%)

Input Power Pin (dBm)

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

NE677M04

j10

0

10

S11

j25

25

50

j50

j100

+135º

S22

100

+180º

+90º

10 15 20

5

+45º

+0º+0º

-j10

-45º

-j25

-j50

-135º

-j100

-90º

NE677M04
VC = 2 V, IC = 10 mA

FREQUENCY S11 S21 S12 S22 K MAG

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.100 0.72 -28.02 23.85 159.39 0.01 76.80 0.94 -17.17 0.11 32.34

0.200 0.67 -53.32 21.19 142.90 0.02 61.76 0.85 -30.90 0.22 29.46

0.300 0.62 -74.47 18.36 129.52 0.03 53.97 0.75 -41.48 0.30 27.71

0.400 0.57 -91.69 15.78 119.03 0.04 47.84 0.66 -49.21 0.38 26.40

0.500 0.54 -105.42 13.68 110.66 0.04 44.49 0.60 -55.01 0.46 25.44

0.600 0.50 -119.13 11.77 103.58 0.04 41.61 0.51 -57.12 0.62 24.54

0.700 0.48 -128.64 10.42 97.78 0.04 40.18 0.48 -61.53 0.69 23.81

0.800 0.47 -136.17 9.33 92.96 0.05 39.74 0.45 -63.91 0.75 23.13

0.900 0.46 -143.27 8.43 88.43 0.05 39.29 0.43 -66.99 0.82 22.51

1.000 0.46 -148.66 7.70 84.44 0.05 39.40 0.42 -69.40 0.87 21.95

1.500 0.44 -170.56 5.30 67.31 0.06 40.48 0.39 -82.07 1.10 17.66

1.800 0.43 179.75 4.47 58.55 0.06 41.76 0.39 -89.26 1.19 15.82

1.900 0.43 176.51 4.24 55.72 0.07 41.66 0.39 -91.76 1.20 15.33

2.000 0.43 173.63 4.04 52.97 0.07 42.00 0.40 -94.18 1.22 14.87

2.500 0.42 159.00 3.26 39.73 0.08 42.28 0.42 -105.45 1.26 13.00

3.000 0.42 144.48 2.73 27.19 0.10 40.73 0.46 -115.95 1.24 11.64

3.500 0.43 129.44 2.34 15.06 0.11 38.24 0.49 -125.23 1.18 10.67

4.000 0.45 115.14 2.04 3.42 0.13 34.92 0.53 -134.51 1.11 9.99

4.500 0.48 102.37 1.79 -7.89 0.14 30.39 0.56 -144.23 1.04 9.71

5.000 0.50 91.32 1.59 -18.83 0.16 25.33 0.59 -154.88 0.97 9.94

5.500 0.53 81.53 1.42 -29.44 0.18 19.49 0.62 -165.89 0.90 9.00

6.000 0.55 72.28 1.27 -39.61 0.20 13.49 0.66 -176.84 0.85 8.11

1

Note:

1. Gain Calculations:

MAG =

|S

21

|

(

12

|

|S

K –

2

K - 1

MAG = Maximum Available Gain
MSG = Maximum Stable Gain

).

When K ≥ 1, MAG is undefined and MSG values are used.

MSG =

21

|

|S

, K =

|S

12

|

2

1 + | ∆ | - |S

2 |S

12 S21

11

2

| - |S22|

|

2

∆ = S

,

11 S22

- S21 S

12

NE677M04
TYPICAL SCATTERING PARAMETERS (TA = 25°C)

j10

0

10

S11

j25

25

50

j50

100

S22

j100

+135º

+180º

+90º

+45º

10 3020

+0º+0º

-j10

-45º

-j25

-j50

-135º

-j100

-90º

NE677M04
VC = 3 V, IC = 20 mA

FREQUENCY S11 S21 S12 S22 K MAG

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.100 0.58 -36.91 34.82 154.30 0.01 65.53 0.91 -19.74 0.28 35.64

0.200 0.53 -67.97 29.03 135.74 0.02 59.98 0.78 -33.77 0.34 32.23

0.300 0.49 -91.49 23.80 122.19 0.02 55.05 0.67 -43.13 0.45 30.35

0.400 0.46 -108.88 19.70 112.29 0.03 51.06 0.58 -49.18 0.56 28.90

0.500 0.44 -121.87 16.66 104.71 0.03 49.50 0.52 -53.43 0.65 27.72

0.600 0.42 -135.00 14.16 98.54 0.03 48.74 0.45 -53.84 0.81 26.72

0.700 0.42 -143.29 12.41 93.35 0.03 49.30 0.42 -57.21 0.89 25.86

0.800 0.41 -149.68 11.03 89.03 0.03 50.12 0.40 -58.72 0.95 25.08

0.900 0.41 -155.84 9.91 84.93 0.04 50.69 0.39 -61.16 0.99 24.32

1.000 0.41 -160.23 9.01 81.35 0.04 51.41 0.38 -63.04 1.04 22.48

1.500 0.40 -178.96 6.14 65.55 0.05 53.28 0.37 -74.89 1.17 18.28

1.800 0.39 172.52 5.16 57.30 0.06 53.31 0.38 -82.12 1.20 16.70

1.900 0.39 169.64 4.90 54.62 0.06 53.31 0.38 -84.61 1.20 16.25

2.000 0.39 167.05 4.66 52.02 0.06 53.16 0.38 -87.15 1.21 15.82

2.500 0.39 153.59 3.75 39.33 0.08 51.37 0.42 -98.84 1.19 14.09

3.000 0.39 139.95 3.14 27.21 0.10 48.43 0.45 -109.77 1.15 12.83

3.500 0.41 125.64 2.68 15.39 0.11 44.68 0.49 -119.46 1.09 12.00

4.000 0.43 111.98 2.34 3.97 0.13 40.02 0.53 -129.07 1.02 11.72

4.500 0.45 99.88 2.06 -7.19 0.15 34.90 0.56 -139.11 0.95 11.48

5.000 0.48 89.38 1.83 -18.07 0.16 29.26 0.60 -150.00 0.88 10.49

5.500 0.51 80.01 1.64 -28.76 0.18 22.90 0.63 -161.27 0.82 9.55

6.000 0.53 71.10 1.47 -39.12 0.20 16.56 0.66 -172.54 0.77 8.69

1

Note:

1. Gain Calculations:

MAG =

|S

21

|

(

12

|

|S

K –

2

K - 1

MAG = Maximum Available Gain
MSG = Maximum Stable Gain

).

When K ≥ 1, MAG is undefined and MSG values are used.

MSG =

21

|

|S

, K =

|S

12

|

2

1 + | ∆ | - |S

2 |S

12 S21

11

2

| - |S22|

|

2

∆ = S

,

11 S22

- S21 S

12

TYPICAL SCATTERING PARAMETERS (TA = 25°C)

NE677M04

j10

0

10

S11

j25

25

50

j50

100

S22

j100

+135º

+180º

+90º

10

20 30 40

+45º

+0º+0º

-j10

-135º

-45º

-90º

NE677M04
VC = 5 V, IC = 30 mA

FREQUENCY S11 S21 S12 S22 K MAG

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.100 0.53 -41.03 40.66 151.83 0.01 79.56 0.89 -20.30 0.21 36.62

0.200 0.48 -73.66 32.81 132.70 0.02 64.08 0.75 -33.75 0.39 33.32

0.300 0.44 -97.50 26.31 119.35 0.02 56.29 0.63 -42.07 0.53 31.43

0.400 0.42 -114.52 21.49 109.81 0.02 53.44 0.56 -47.07 0.66 30.03

0.500 0.41 -127.00 18.03 102.57 0.02 53.31 0.50 -50.52 0.75 28.75

0.600 0.39 -139.82 15.28 96.73 0.03 53.08 0.43 -50.09 0.90 27.65

0.700 0.39 -147.57 13.34 91.78 0.03 54.05 0.41 -52.99 0.98 26.75

0.800 0.38 -153.47 11.83 87.64 0.03 55.02 0.40 -54.21 1.02 24.98

0.900 0.38 -159.31 10.62 83.69 0.03 55.65 0.39 -56.48 1.06 23.55

1.000 0.38 -163.26 9.64 80.25 0.04 56.16 0.38 -58.27 1.09 22.49

1.500 0.37 179.14 6.55 64.91 0.05 58.22 0.37 -70.16 1.18 18.69

1.800 0.37 171.01 5.50 56.83 0.06 57.93 0.38 -77.47 1.19 17.16

1.900 0.37 168.30 5.22 54.20 0.06 57.51 0.39 -80.11 1.20 16.71

2.000 0.37 165.83 4.96 51.65 0.06 57.41 0.39 -82.71 1.20 16.30

2.500 0.37 152.63 3.99 39.13 0.08 54.90 0.43 -94.79 1.17 14.62

3.000 0.37 139.29 3.33 27.15 0.09 51.63 0.46 -106.02 1.12 13.43

3.500 0.38 125.14 2.85 15.43 0.11 47.27 0.50 -116.01 1.05 12.75

4.000 0.40 111.70 2.49 4.05 0.13 42.60 0.54 -125.90 0.99 12.91

4.500 0.43 99.67 2.19 -7.08 0.15 37.08 0.58 -136.09 0.91 11.79

5.000 0.46 89.42 1.95 -17.99 0.16 31.31 0.61 -147.22 0.84 10.78

5.500 0.49 80.22 1.74 -28.73 0.18 25.13 0.65 -158.70 0.78 9.86

6.000 0.51 71.38 1.56 -39.19 0.20 18.62 0.68 -170.08 0.73 8.98

1

Note:

1. Gain Calculations:

MAG =

K –

2

K - 1

).

When K ≥ 1, MAG is undefined and MSG values are used.

|S

21

|

(

12

|

|S

MSG =

|S

, K =

|S

12

|

21

|

2

1 + | ∆ | - |S

2 |S

12 S21

11

2

| - |S22|

|

2

∆ = S

,

11 S22

- S21 S

MAG = Maximum Available Gain
MSG = Maximum Stable Gain

Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]

DATA SUBJECT TO CHANGE WITHOUT NOTICE

EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

Internet: http://WWW.CEL.COM
11/22/2002

12