CEL NE67400, NE67483B User Manual
查询NE67400供应商
NEC's L TO Ku BAND LOW NOISE
AMPLIFIER N-CHANNEL GaAS MESFET
FEATURES
• LOW NOISE FIGURE:
NF = 1.4 dB TYP at f = at 12 GHz
• HIGH ASSOCIATED GAIN:
G
A = 10 dB TYP at f = 12 GHz
• GATE WIDTH: W
• GATE LENGTH: L
DESCRIPTION
NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This
device features a low noise figure with high associated gain,
employing a recessed 0.3 micron gate and triple epitaxial
technology. The active area of the chip is covered with SiD2
and Si3N4 for scratch protection and surface stability. This
device is suitable for both amplifier and oscillator applications.
This device is housed in a solder sealed hermetic, metal
ceramic package for high reliability in space applications.
G = 280 µm
G = 0.3 µm
NE67400
NE67483B
NOISE FIGURE, ASSOCIATED GAIN
3.0
2.0
Noise Figure, NF (dB)
1.0
0
1246810142030
vs. FREQUENCY
G
A
NF
Frequency, f (GHz)
VDS = 3 V
I
D
= 10 mA
24
20
, (dB)
A
16
12
8
Associated Gain, G
4
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER NE67400
PACKAGE OUTLINE NE67483B
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
NF Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz dB 0.6
GA Associated Gain at VDS = 3 V ID = 10 mA, f = 4 GHz dB 14.0
P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz,
VDS = 3 V, IDS = 30 mA dBm 14.5
IDSS Saturated Drain Current at VDS = 3 V, VGS = 0 V mA 20 40 120
VGS(OFF) Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA V -0.5 -1.1 -3.5
gm Transconductance at VDS = 3 V, ID = 10 mA mS 20 50 100
IGSO Gate to Source Leakage Current at VGS = -5 V µA 1.0 10
RTH (CH-C) Thermal Resistance (Channel-to-Case) NE67400 °C/W 190
f = 12 GHz dB 1.4 1.6
f = 12 GHz dB 8.5 10.0
NE67483B °C/W 450
California Eastern Laboratories
NE67400, NE67483B
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 5.0
V
GD Gate to Drain Voltage V –6.0
DS Drain Current mA IDSS
I
TCH Channel Temperature °C 175
TSTG Storage Temperature °C -65 to +175
T Total Power Dissipation
P
NE67483B mW 270
NE67400 mW 400
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage.
RECOMMENDED OPERATING
CONDITIONS
SYMBOLS PARAMETERS UNITS MIN TYP MAX
VDS Drain to Source Voltage V 3 4
ID Drain Current mA 10 30
PIN Input Power dBm 15
(TA = 25°C)
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 3 V, IDS = 10 mA (NE67483B)
FREQ. NFOPT GA
(GHz) (dB) (dB) MAG ANG Rn/50
2 0.55 17.0 0.81 37 0.57
3 0.58 15.2 0.75 53 0.51
4 0.60 14.0 0.70 69 0.44
5 0.68 13.2 0.67 83 0.37
6 0.76 12.6 0.65 97 0.31
7 0.85 12.0 0.64 111 0.25
8 0.93 11.5 0.64 123 0.19
9 1.03 11.0 0.64 136 0.14
10 1.15 10.7 0.64 148 0.10
11 1.26 10.3 0.64 161 0.06
12 1.40 10.0 0.63 173 0.05
13 1.55 9.6 0.62 -173 0.05
14 1.70 9.2 0.60 -159 0.08
15 1.84 9.0 0.57 -145 0.15
16 2.04 8.6 0.53 -129 0.23
17 2.18 8.3 0.46 -113 0.34
18 2.35 8.0 0.38 -95 0.44
ΓΓ
ΓOPT
ΓΓ
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
(mW)
300
T
NE67400
200
100
Total Power Dissipation, P
0 50 100 150 200
Ambient Temperature, TA (°C)
NE67483B
DRAIN TO SOURCE VOLTAGE
40
(mA)
DS
30
20
Drain Current, I
10
0
Drain to Source Voltage, VDS (V)
DRAIN CURRENT vs.
VGS = 0 V
-0.2 V
-0.4 V
-0.6 V
21453
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
40
(mA)
DS
30
20
Drain Current, I
10
VDS = 3 V
NE67400, NE67483B
0
-1.0-2.0 0
Gate to Source Voltage, VGS (V)
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
VDS = 3 V, ID = 10 mA
Start 500 MHz,
Stop 18 GHZ,
Step 500 MHz
0
Marker
1 : 2 GHz
2 : 4 GHz
3 : 8 GHz
4 : 12 GHz
5 : 16 GHz
0.5
-0.5
NE67483B
S11
1.0
2.0
5
4
3
2
-1.0
-2.0
0
1
0.5
5
0
4
-0.5
S
22
1.0
3
-1.0
2.0
0
1
2
-2.0
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