CEL NE6510179A User Manual
查询NE6510179供应商
NEC's 3W, L&S-BAND
MEDIUM POWER GaAs HJ-FET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
• USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
• HIGH OUTPUT POWER:
35 dBm TYP with 5.0 V Vdc
32.5 dBm TYP with 3.5 V Vdc
• HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
• LOW THERMAL RESISTANCE:
5°C/W
DESCRIPTION
NEC's NE6510179A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 1.8 watts of output
power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
NE6510179A
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 MAX
Source
Gate
5.7 MAX
0.6 – 0.15
0.9 – 0.2
Note: Unless otherwise specified, tolerance is ±0.2 mm
I
T
5.7 MAX
X
9
0.4 – 0.15
Drain
0.2 – 0.1
4.4 MAX
0.8 – 0.15
Gate
1.0 MAX
1.5 – 0.2
3.6 – 0.2
BOTTOM VIEW
Source
0.8 MAX
Drain
MAX
1.2
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER NE6510179A
PACKAGE OUTLINE 79A
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS
POUT Output Power dBm 31.5 32.5
GL Linear Gain
ηADD Power Added Efficiency % 50 58
Functional
Characteristics
ID Drain Current A 0.72
IDSS Saturated Drain Current A 2.4 VDS = 2.5 V; VGS = 0 V
VP Pinch-Off Voltage V -2.0 -0.4 VDS = 2.5 V; ID = 14 mA
RTH Thermal Resistance °C/W 5 8 Channel to Case
Electrical DC
Characteristics
BVGD Gate to Drain Breakdown Voltage V 12 IGD = 14 mA
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
1
dB 10.0
f = 1900 MHz, VDS = 3.5 V,
Pin = +25 dBm, Rg = 100 Ω
IDSQ = 200 mA (RF OFF)
California Eastern Laboratories
2
NE6510179A
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 25°C)
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS
OUT Output Power dBm 35.0
P
G
ηADD Power Added Efficiency % 56
D Drain Current A 1.2
I
P
OUT Output Power dBm 31.5
G
ηADD Power Added Efficiency % 70
I
D Drain Current A 0.53
Notes:
1. Pin = 0 dBm
L Linear Gain
L Linear Gain
1
1
dB 10.0
dB 15.0
f = 1900 MHz, VDS = 5.0 V,
Pin = +25 dBm, Rg = 100 Ω
IDSQ = 200 mA (RF OFF)
f = 900 MHz, V
Pin = +20 dBm, Rg = 100 Ω
DSQ = 200 mA (RF OFF)
I
DS = 3.5 V,
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)
SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 8
VGS Gate to Source Voltage V -4
IDS Drain Current A 2.8
IGS Gate Current (IGF, IGR) mA±25
PT Total Power Dissipation
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
(W)
D
15
2
W15
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS UNITS TYP MAX
VDS Drain to Source Voltage V 3.5 6.0
TCH Channel Temperature °C +125
GCOMP Gain Compression
Note:
1. Recommended maximum gain compression is 3.0 dB at
VDS > 4.2 V.
ORDERING INFORMATION
PART NUMBER QTY
NE6510179A-T1-A 1 K/Reel
NE6510179A-A Bulk, 100 piece min.
1
dB 3.0
10
5
Total Power Dissipation, P
0
25°C
Case Temperature, TC (°C)
RTH = 8°C/W
15010050
TYPICAL PERFORMANCE CURVES (TA = 25°C)
2.00
1.50
1.00
0.50
2.50
0
0.8
0.6
0.4
0.2
1.00
0
-.80-1.0 -.60 -.20 0.00-.40
NE6510179A
3
2.5
(A)
D
2.0
1.5
1.0
Drain Current, I
0.5
0
012 3456
1.0E+07
1.0E+06
1.0E+05
DRAIN CURRENT vs.
DRAIN VOLTAGE
Drain Voltage, VD (V)
ARRHENIUS PLOTS vs.
JUNCTION TEMPERATURE
1.35E+06 Hrs
(T
CH
= 110°C)
EA = 1.0EV
VGS =
0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
(mS)
M
Transconductance, G
Gate Voltage, G
MAXIMUM AVAILABLE GAIN vs.
30
(dB)
25
MAG
20
15
FREQUENCY
V (V)
(A)
D
Drain Current, I
1.0E+04
1805 Hrs
(T
CH
= 217°C)
Arrhenius Plots, MTTF (hours)
1.0E+03
1.81.6 2 2.42.2 2.6 32.8
Junction Temperature, T/TCH (1/K/1000)
2.2 V, 200 mA
10
4.6 V, 300 mA
Maximum Available Gain, G
3.5 V, 150 mA
5
0.1 4.0
Frequency, GHz
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