CEL NE650103M User Manual
查询NE650103M-A供应商
NEC'S 10 W L & S-BAND
POWER GaAs MESFET
FEATURES
• LOW COST PLASTIC PACKAGE
• USABLE TO 2.7 GHz:
PCS, W-CDMA, WLL, Satellite Uplink, BWA
• HIGH OUTPUT POWER:
40 dBm TYP
• HIGH POWER ADDED EFFICIENCY:
45 % TYP at 2.3 GHz
• LOW THERMAL RESISTANCE:
4.0° C/W
• LEAD-FREE
DESCRIPTION
NEC's NE650103M is a 10 W GaAs MESFET designed for
PCS, W-CDMA, WLL transmitter applications. It is capable of
delivering 10 Watts of output power with high linear gain, high
efficiency and excellent linearity. Reliability and performance
uniformity are assured by NEC's stringent quality and control
procedures
NE650103M
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 3M
20.32 ± 0.15
14.27 ± 0.15
3.5 ± 0.2
2-φ 3.3 ± 0.3
2.04 ± 0.3
GATE
DRAIN
SOURCE
8.54 ± 0.2
0.15 ± 0.05
5.84 ± 0.2
13.8 ± 0.35
1.8 ± 0.3
4.2 ± 0.4
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER NE650103M
PACKAGE OUTLINE 3M
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS
P1dB Power Out at 1dB Gain Compression dBm 39.0 40.0
Functional
Electrical DC
GL Linear Gain (at Pin ≤ 23 dBm) dB 10.0 11.0
Characteristics
ηADD Power Added Efficiency % 45
IDSS Saturated Drain Current A 2.0 5.0 7.0 VDS = 2.5 V; VGS = 0 V
VP Pinch-Off Voltage V -4.0 -2.5 -1.0 VDS = 2.5 V; IDS = 23 mA
RTH Thermal Resistance °C/W 4.0 4.5 Channel to Case
Characteristics
f = 2.3 GHz, VDS = 10.0 V
IDSQ ≤ 1.5 A (RF OFF)
Rg = 100 Ω
California Eastern Laboratories
NE650103M
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)
SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 15
VGD Gate to Drain Voltage V -18
VGS Gate to Source Voltage V -7.0
DS Drain Current A 5
I
I
GF Gate Current mA 45
PT Total Power Dissipation W 33
TCH Channel Temperature °C 175
TSTG Storage Temperature °C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
9
8
7
6
5
4
3
Drain Current, (A)
2
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
Drain To Source Voltage, (V)
V
GS
= 0 V
V
GS
I
V
V
= -0.5 V
GS
V
DS
= 1 A/Div
DS
= 0.5 V/Div
GS
= -0.5 V
= -1.0 V
V
GS
V
GS
V
GS
= -1.5 V
= -2.0 V
= -2.5 V
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS UNITS TYP MAX
V
DS Drain to Source Voltage V 10.0 10.0
CH Channel Temperature °C150
T
G
COMP Gain Compression dB 3.0
Rg Gate Resistance Ω 100
ORDERING INFORMATION
PART NUMBER PACKAGE
NE650103M-A 3M
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
35
33 W
(W)
30
D
25
20
15
10
Total Power Dissipation, P
0
18 43
Case Temperature, TC (°C)
ABSOLUTE MAXIMUM
RECOMMENDED
150 200175100500
NE650103M
0
TYPICAL PERFORMANCE CURVES (TA = 25°C)
POWER ADDED EFFICIENCY
45
DS
= 10 V,
V
I
DSQ
= 1.5 A
F = 880 MHz
40
(dBm)
35
OUT
30
25
Output Power, P
20
15
5101520250 0
0
POWER ADDED EFFICIENCY
45
P
out (IDSQ
out (IDSQ
P
out (IDSQ
P
40
PAE (I
(dBm)
OUT
PAE (I
PAE (I
35
30
OUTPUT POWER AND
P
out
PAE
Input Power, PIN (dBm)
OUTPUT POWER AND
f =1.96 GHz
V
DSQ
DSQ
DSQ
= 1 A)
= 1.5 A)
= 2 A)
= 1 A)
= 1.5 A)
= 2 A)
DS
= 10 V
100
80
(%)
AE
60
40
20
0
Power Added Efficiency, P
-20
100
(%)
80
AE
60
40
OUTPUT POWER AND
POWER ADDED EFFICIENCY
45
V
DS
= 10 V,
I
DSQ
= 1.5 A
Rg = 100 Ω
F = 1.5 GHz
40
(dBm)
35
OUT
30
25
Output Power, P
20
10 15 20 25 30 35
Input Power, PIN (dBm)
THIRD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
-20
V
DS
= 10 V,
F1 = 1.9575 GHz
-25
F2 = 1.9575 GHz
-30
-35
-40
-45
100
(%)
80
AE
60
40
20
Power Added Efficiency, P
0
25
Output Power, P
20
10 15 20 25 30 35
Input Power, PIN (dBm)
4
ID (
DSQ
ID (
(A)
DS
Drain Current, I
DSQ
DSQ
IG (
3
2
1
0
10
15 20 25 30 35
= 1 A)
= 2 A)
= 1.5 A
ID (
IG (
IG (
DSQ
DSQ
DSQ
= 1.5 A)
= 1 A)
= 2 A)
Input Power, PIN (dBm)
f =1.96 GHz
V
DS
= 10 V
20
Power Added Efficiency, P
0
30
(mA)
G
20
10
0
Gate Current, I
-10
-50
-55
Intermodulation Distortion, IM3 (dBc)
-60
20 25 30 35 4
I
DSQ
I
DSQ
DSQ
I
2-Tone Output Power, POUT (dBm)
= 1 A
= 1.5 A
= 2 A
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