CEL NE5520379A User Manual

0.9±0.2

0.2±0.1

(Bottom View)

3.6±0.2

1.5±0.2

1.2 MAX.

0.8 MAX.

1.0 MAX.

Source

Gate

Drain

0.4±0.15

5.7 MAX.

5.7 MAX.

0.6±0.15

0.8±0.15

4.4 MAX.

4.2 MAX.

Source

Gate

Drain

A 3

9Z001

查询NE5520379A供应商

MEDIUM POWER SILICON LD-MOSFET

NEC'S 3.2 V, 3 W, L/S BAND

NE5520379A

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 79A

• HIGH OUTPUT POWER: +35.5 dBm TYP

• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz

• HIGH POWER ADDED EFFICIENCY: 65% TYP @

VDS = 3.2 V, f = 915 MHz

• SINGLE SUPPLY: 2.8 to 6.0 V

• CLASS AB OPERATION

• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

DESCRIPTION

NEC's NE5520379A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for

3.2 V GSM900 handsets. Die are manufactured using NEC's
NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOS­FET) and housed in a surface mount package. This device
can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or

34.6 dBm output power at 2.8 V by varying the gate voltage
as a power control function.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE5520379A

PACKAGE OUTLINE 79A

SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS

POUT Output Power dBm 35.5

GL Linear Gain (at PIN = +10 dBm) dB 16.0

ηD Drain Efficiency % 68

ηADD Power Added Efficiency % 65

ID Operating Drain Current A 1.0

POUT Output Power dBm 31.0 33.0

GL Linear Gain (at PIN = +10 dBm) dB 8.5

Functional

Characteristics

ID Operating Drain Current mA 750

ηD Drain Efficiency % 29 38

ηADD Power Added Efficiency % 35

IGSS Gate-to-Source Leakage Current nA 100 VGS = 6.0 V

IDSS Drain-to-Source Leakage Current nA 100 VDS = 8.5 V

VTH Gate Threshold Voltage V 1.0 1.35 2.0 VDS = 3.5 V, IDS = 1 mA

gm Transconductance S 2.5 VDS = 3.5 V, IDS1 = 0.8 A, IDS2 = 1.0 A

BVDSS Drain-to-Source Breakdown Voltage V 15 20 IDSS = 10 µA

Characteristics

Electrical DC

RTH Thermal Resistance °C/W 5 Channel-to-Case

Note:

1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.

APPLICATIONS

• DIGITAL CELLULAR PHONES:

3.2 V GSM900/DCS 1800 Dual Band Handsets

• OTHERS:
Two-Way Pagers
Retail Business Radio
Special Mobile Radio
Short Range Wireless

f = 915 MHz, VDS = 3.2 V,

VGS = 2.5 V(RF OFF)

(NOTE 1)

f = 1785 MHz, VDS = 3.2 V,

VGS = 2.5 V

(NOTE 1)

California Eastern Laboratories

4.0

1.0

2.0

1.5

3.5

2.5

3.0

0.5

0

1097 8653 41 2

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

2.6 V

2.4 V

2.2 V

2.0 V

VDS = 3.2 V

10 000

100

1 000

10

1

3.02.52.01.51.0

NE5520379A

ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)

SYMBOLS PARAMETERS UNITS RATINGS

VDS Drain to Source Voltage V 15.0

VGS Gate to Source Voltage V 5.0

ID Drain Current A 1.5

ID Drain Current (Pulse Test)2 A 3.0

PT Total Power Dissipation W 20

TCH Channel Temperature °C 125

TSTG Storage Temperature °C -65 to +125

Note:

1. Operation in excess of any one of these parameters may result
in permanent damage.

2. Duty Cycle ≤ 50%, Ton ≤ 1 s.

ORDERING INFORMATION

PART NUMBER QTY

NE5520379A-T1A-A

RECOMMENDED OPERATING LIMITS

SYMBOLS PARAMETERS UNITS TYP MAX

VDS Drain to Source Voltage V 3.2 6.0

VGS Gate to Source Voltage V 2.5 3.5

IDS Drain Current (Pulse Test) A 1.75 2.0

PIN Input Power dBm 25 26

TYPICAL PERFORMANCE CURVES (TA = 25°C)

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

Drain Current, ID (A)

Drain to Source Voltage, VDS (V)

QUIESCENT DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

Quiescent Drain Current, ID (A)

Gate to Source Voltage, VGS (V)

TYPICAL PERFORMANCE CURVES (TA = 25°C)

VDS = 3.2 V
IDSQ = 600 mA
f = 915 MHz

Pout

I

D

40

25

35

30

20

15

2 50

0

2 00

0

1 50

0

1 00

0

500

0

35302015105 25

V

DS

= 3.2 V

I

DSQ

= 600 mA

f = 915 MHz

d

η

add

η

100

50

0

3530252015105

V

DS

= 3.2 V
IDSQ = 600 mA
f = 1 785 MHz

P

out

I

D

35

20

30

25

15

10

2 50

0

2 00

0

1 50

0

1 00

0

500

0

35302015105 25

V

DS

= 3.2 V
IDSQ = 600 mA
f = 1 785 MHz

d

η

add

η

100

50

0

3530252015105

2500

2000

1500

1000

500

0

0

15

20

25

30

35

40

V

DS

= 3.6 V

I

Dset

= 150 mA

f = 460 MHz

5 10 15 20 2

5

P

out

I

D

100

50

0

0 5

10 15 20 25

V

DS

= 3.6 V
I

Dset

= 150 mA
f = 460 MHz

ηd

ηadd

NE5520379A

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER (460 MHz)

Output Power, Pout (dBm)

Input Power, Pin (dBm)

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER

Drain Current, ID (mA)

DRAIN EFFICIENCY, POWER ADDED

EFFICIENCY vs. INPUT POWER

Drain Efficiency ,ηd (%)

Powwer Added Efficiency, ηadd (%)

Input Power, Pin (dBm)

DRAIN EFFICIENCY, POWER ADDED

EFFICIENCY vs. INPUT POWER

Output Power, Pout (dBm)

Input Power, Pin (dBm)

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER

Output Power, Pout (dBm)

Input Power, Pin (dBm)

Drain Current, ID (mA)

Drain Current, ID (mA)

Drain Efficiency ,ηd (%)

Powwer Added Efficiency, ηadd (%)

Input Power, Pin (dBm)

DRAIN EFFICIENCY, POWER ADDED

EFFICIENCY vs. INPUT POWER

Drain Efficiency ,ηd (%)

Powwer Added Efficiency, ηadd (%)

Input Power, Pin (dBm)