CEL NE5511279A User Manual
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查询NE5511279A供应商
NEC'S 7.5 V UHF BAND
RF POWER SILICON LD-MOS FET
FEATURES
• HIGH OUTPUT POWER:
Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V,
Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V,
• HIGH POWER ADDED EFFICIENCY:
ηadd = 48% TYP., f = 900 MHz, VDS = 7.5 V,
ηadd = 50% TYP., f = 460 MHz, VDS = 7.5 V,
• HIGH LINEAR GAIN:
GL = 15.0 dB TYP., f = 900 MHz, VDS = 7.5 V,
GL = 18.5 dB TYP., f = 460 MHz, VDS = 7.5 V,
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
VDS = 2.8 to 8.0 V
APPLICATIONS
• UHF RADIO SYSTEMS
• CELLULAR REPEATERS
• TWO-WAY RADIOS
• FRS/GMRS
• FIXED WIRELESS
NE5511279A
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
Gate
1.0 MAX.
(Bottom View)
1.5±0.2
Source
Drai
0.8 MAX.
3.6±0.2
4.2 MAX.
Source
0.6±0.15
5.7 MAX.
0.9±0.2
Gate
W 3
5.7 MAX.
21001
0.4±0.15
Drain
0.8±0.15
0.2±0.1
4.4 MAX.
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally
dif fused MOSFET spe cial ly designed as the transmission
power amplifi er for 7.5 V radio systems. Die are man u -
fac tured us ing NEC's NEWMOS1 tech nol o gy and housed in
a surface mount pack age. This device can deliver 40.0 dBm
output power with 48% power added effi ciency at 900 MHz
using a 7.5 V supply voltage.
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONS
−
dBm
f = 900 MHz, V
−
−
−
−
−
−
−
APin = 27 dBm,
I
DSQ
%
= 400 mA (RF OFF)
dB Pin = 5 dBm
dBm
f = 460 MHz, V
APin = 25 dBm,
I
DSQ
%
= 400 mA (RF OFF)
dB Pin = 5 dBm
100 nA VGS = 6.0 V
DS
100 nA V
−
°C/W Channel to Case
−
−
SVDS = 3.5 V, IDS = 900 mA
VI
= 8.5 V
DSS
= 15 µA
DS
= 7.5 V,
DS
= 7.5 V,
BV
P
η
P
η
I
I
I
G
I
G
GSS
DSS
V
R
g
add
add
out
D
out
D
Output Power 38.5 40.0
Drain Current
−
2.5
Power Added Effi ciency 42 48
L
Linear Gain
Output Power
Drain Current
Power Added Effi ciency
L
Linear Gain
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
th
Gate Threshold Voltage 1.0 1.5 2.0 V VDS = 4.8 V, IDS = 1.5 mA
th
Thermal Resistance
m
Transconductance
DSS
Drain to Source Breakdown Voltage 20 24
−
−
−
−
−
15.0
40.5
2.75
50
18.5
−−
−−
−
−
5
2.3
Notes:
DC performance is 100% tested. RF performance is tested on several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
California Eastern Laboratories
NE5511279A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS PARAMETERS UNITS RATINGS
V
DS Drain Supply Voltage
GS Gate Supply Voltage V 6.0
V
D Drain Current A 3.0
I
2
V 20.0
PTOT Total Power Dissipation W 20
T
CH Channel Temperature °C 125
STG Storage Temperature °C -55 to +125
T
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. VDS must be used under 12 V on RF operation.
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
4.0
1.7
Source
Gate Drain
5.9
1.0
0.5
1.2
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS UNITS TYP MAX
VDS Drain to Source Voltage V 7.5 8.0
VGS Gate Supply Voltage V 2.0 3.0
DS Drain Current
I
1
A 2.5 3.0
PIN Input Power dBm 27 30
f = 900 MHz, VDS = 7.5 V
ORDERING INFORMATION
PART NUMBER QTY
NE5511279A-T1 • 12 mm wide embossed taping.
• Gate pin faces the perforation side of
the tape.
• 1 Kpcs/Reel
NE5511279A-T1A • 12 mm wide embossed taping.
• Gate pin faces the perforation side of
the tape.
• 5 Kpcs/Reel
Through hole φ 0.2 × 33
0.5 0.5
6.1
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT,
η
d, ηadd vs. INPUT POWER
45
f = 900 MHz
40
35
30
25
Output Power, Pout (dBm)
20
10 15 20 25 30 35
P
IDS
ηd
ηadd
5
out
4
100
DS (A)
75
3
50
2
25
1
Drain to Source Current, I
0
0
Drain Effi ciency, ηd (%)
Power Added Effi ciency, ηadd (%)
OUTPUT POWER, DRAIN CURRENT,
ηd, ηadd vs. INPUT POWER
45
f = 460 MHz
40
35
30
25
Output Power, Pout (dBm)
20
10 15 20 25 30 35
P
IDS
ηd
ηadd
5
out
4
100
DS (A)
75
3
50
2
25
1
Drain to Source Current, I
0
0
Drain Effi ciency, ηd (%)
Power Added Effi ciency, ηadd (%)
Input Power,P
in (dBm)
Input Power,P
in (dBm)
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