CEL NE5510279A User Manual

查询NE5510279A供应商

3.5 V OPERATION SILICON RF

POWER MOSFET FOR GSM1800

TRANSMISSION AMPLIFIERS

FEATURES

• HIGH OUTPUT POWER:

32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, P

• HIGH POWER ADDED EFFICIENCY:

45% TYP at V
f = 1.8 GHz, PIN = 25 dBm

• HIGH LINEAR GAIN:

10 dB TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 10 dBm

• SURFACE MOUNT PACKAGE:

5.7 x 5.7 x 1.1 mm MAX

• SINGLE SUPPLY:

2.8 to 6.0 V

DESCRIPTION

The NE5510279A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for

3.5 V GSM1800 handsets. Dies are manufactured using NEC's
NEWMOS technology (NEC's 0.6 µm WSi gate lateral
MOSFET) and housed in a surface mount package. This de­vice can deliver 32 dBm output power with 45% power added
efficiency at 1.8 GHz under the 3.5 V supply voltage, or can
deliver 31 dBm output power at 2.8 V by varying the gate
voltage as a power control function.

IN = 25 dBm
DS = 3.5 V, IDQ = 400 mA,

NE5510279A

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 79A

4.2 Max

Source

0.4 ± 0.15

Drain

0.2 ± 0.1

0.8 ± 0.15

4.4 Max

Gate

1.0 Max

Bottom View

Gate

5.7 Max

0.6 ± 0.15

5.7 Max

0.9 ± 0.2

APPLICATIONS

• DIGITAL CELLULAR PHONES

• OTHERS

1.5 ± 0.2

Source

Drain

1.2 Max

0.8 Max

3.6 ± 0.2

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE5510279A
PACKAGE OUTLINE 79A

SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS

IGSS Gate to Source Leakage Current nA - - 100 VGSS = 6.0 V
IDSS Drain to Source Leakage Current nA - - 100 VDSS = 8.5 V

VTH Gate Threshold Voltage V 1.0 1.35 2.0 VDS = 4.8 V, IDS = 1 mA

gm Transconductance S - 1.50 - VDS = 4.8 V, IDS1 = 500 mA, IDS2 = 700 mA

RDS(ON) Drain to Source On Resistance - - 0.27 - VGS = 6.0 V, VDS = 0.5 V

BVDSS Drain to Source Breakdown Voltage V 20 24 - IDSS = 10 A

California Eastern Laboratories

NE5510279A
PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C)

SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS

L Linear Gain dB — 10.0 — f = 1.8 GHz, PIN = 10 dBm,

G

V

DS = 3.5 V,IDQ = 400 mA

OUT(1) Output Power dBm 31.0 32.0 — f = 1.8 GHz, PIN = 25 dBm,

P

I

OP(1) Operating Current mA — 810 — VDS = 3.5 V,IDQ = 400 mA

ηADD(1) Power Added Efficiency % 37 45

POUT(2) Maximum Output Power dBm — 32.6 — f = 1.8 GHz, PIN = 25 dBm

IOP(2) Operating Current mA — 1,000 — VDS = 3.5 V,VGS = 2.5 V

POUT(3) Output Power at Lower Voltage dBm — 31.1 — f = 1.8 GHz, PIN = 25 dBm

IOP(3) Operating Current mA — 880 — VDS = 2.8 V,VGS = 2.5 V

GL Linear Gain dB — 10.0 — f = 1.8 GHz, PIN = 10 dBm,

VDS = 4.8 V,IDQ = 400 mA

POUT Output Power dBm — 35.0 — f = 1.8 GHz, PIN = 28 dBm,

IOP Operating Current mA — 1,120 — VDS = 4.8 V,IDQ = 400 mA

ηADD Power Added Efficiency % — 48 —

GL Linear Gain dB 35.0 35.0 35.0 f = 1.8 GHz, PIN = 10 dBm,

V

DS =6.0 V,IDQ = 400 mA

POUT Output Power dBm 37.0 f = 1.8 GHz, PIN = 30 dBm,

IOP Operating Current mA 1,400 VDS =6.0 V,IDQ = 400 mA

ηADD Power Added Efficiency % 49

ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)

SYMBOLS PARAMETERS UNITS RATINGS

VDS Drain Supply Voltage V 8.5
VGS Gate Supply Voltage V 6

ID Drain Current A 1.0
ID Drain Current (Pulse Test)

PIN Input Power

PT Total Power Dissipation W 2.4

TCH Channel T emperature °C 125

TSTG Storage Temperature °C -55 to +125

Notes:

1. Operation in excess of any one of these parameters may result
in permanent damage.

2. Duty Cycle 50%, ton = 1 ms.

3. Frequency = 1.8 GHz, VDS = 3.5 V.

3

2

A 2.0

dBm 30

ORDERING INFORMATION

PART NUMBER QTY

NE5510279A-T1 1 Kpcs/Reel

Note:
Embossed tape 12 mm wide. Gate pin faces perforation side of the
tape.

RECOMMENDED OPERATING CONDITIONS

SYMBOLS PARAMETERS TEST CONDITIONS UNITS MIN TYP MAX

VDS Drain Supply Voltage V 2.8 3.5 6.0
VGS Gate Supply Voltage V 0 2.0 2.5

ID Drain Current (Pulse Test) Duty Cycle 50%, Ton1ms A — — 1.5

PIN Input Power Frequency = 1.8 GHz, VDS = 3.5 V dBm 24 25 26

f Operating Frequency Range GHz 1.6 — 2.0

TOP Operating T emperature ˚C -30 25 85

TYPICAL PERFORMANCE CURVES (TA = 25°C)

POUT

IDS

η

η

ADD

2500

2000

1500

1000

500

0

100

50

0

33

32

31

30

29

28

0.0 1.0

2.0

3.0

4.0

PMAX = 32.6 dBm

APC

VDS = 3.5 V
f = 1.8 GHz
P

IN = 25 dBm

NE5510279A

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

12.0
V

GS

MAX = 10 V

Step = 1.0 V

10.0

(A)

8.0

DS

6.0

4.0

Drain Current, I

2.0

0.0
0 2 4 6 8 10 12 14 16

Drain to Source Voltage, VDS (V)

OUTPUT POWER, DRAIN CURRENT,

EFFICIENCY AND POWER ADDED

EFFICIENCY vs. INPUT POWER

35

30

(dBm)

25

OUT

VDS = 3.5 V
I

DQ

= 400 mA

f = 1.8 GHz

PO = 32.0 dBm

OUT

P

2500

2000

1500

(mA)

DS

(%)

ADD

DRAIN CURRENT vs. GATE TO

SOURCE VOLTAGE

10000

V

DS

= 3.5 V

1000

(mA)

DQ

100

10

Drain Current, I

1

1.0

1.5

Gate to Source Voltage, V

2.0

2.5

GS (V)

3.0

OUTPUT POWER, DRAIN CURRENT, EFFICIENCY

AND POWER ADDED EFFICIENCY vs.

GATE TO SOURCE VOLTAGE

(dBm)

OUT

(mA)

DS

(%)

ADD

20

15

Output Power, P

10

35

30

(dBm)

25

OUT

20

Output Power, P

15

10

I

D

η

ADD

η

5 1015 2025

Input Power, PIN (dBm)

OUTPUT POWER, DRAIN CURRENT,

EFFICIENCY AND POWER ADDED

EFFICIENCY vs. INPUT POWER

P

MAX

= 30.6 dBm

VDS = 2.8 V
I

DQ

f = 1.8 GHz

5

= 400 mA

10

Input Power, PIN (dBm)

P

OUT

I

15

D

η

ADD

η

25

20

Drain Current, I

1000

100

50

500

0

0

30

Efficiency/Power Added Efficiency, η, η

Output Power, P

Drain Current, I

Efficiency/Power Added Efficiency, η, η

Gate to Source Voltage, VGS (V)

OUTPUT POWER, DRAIN CURRENT, EFFICIENCY

AND POWER ADDED EFFICIENCY vs.

GATE TO SOURCE VOLTAGE

4.0

2500

2000

1500

1000

500

0

100

50

0

(%)

ADD

(mA)

DS

Drain Current, I

Efficiency/Power Added Efficiency, η, η

2500

2000

1500

1000

500

0

30

(%)

ADD

(mA)

DS

Drain Current, I

100

50

0

Efficiency/Power Added Efficiency, η, η

32

31

(dBm)

30

OUT

29

28

Output Power, P

27

0.0 1.0

PO = 31.1 dBm

P

OUT

APC

2.0

I

DS

η

η

ADD

V

DS

= 2.8 V
f = 1.8 GHz
P

IN

= 25 dBm

3.0

Gate to Source Voltage, VGS (V)

NE5510279A

TYPICAL SCATTERING PARAMETERS

(TA = 25°C)

NE5510279A
VD = 3.5 V, IDS = 400 mA

FREQUENCY S11 S21 S12 S22 K MAG

GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)

0.1 0.889 -149.7 8.66 99.8 0.019 14.6 0.854 -173.8 -0.50 26.6

0.2 0.872 -165.4 4.41 87.5 0.020 3.4 0.861 -177.7 -0.36 23.4

0.3 0.871 -170.9 2.91 82.0 0.020 -1.8 0.875 -178.6 -0.25 21.6

0.4 0.871 -173.7 2.13 76.1 0.019 -4.1 0.869 -179.6 -0.01 20.5

0.5 0.873 -175.6 1.69 71.5 0.019 -9.5 0.886 179.7 0.04 19.5

0.6 0.880 -176.9 1.37 67.7 0.018 -11.8 0.886 179.2 0.22 18.8

0.7 0.884 -177.9 1.17 63.9 0.016 -10.6 0.893 178.9 0.40 18.6

0.8 0.897 -179.1 0.99 60.5 0.016 -10.2 0.898 178.0 0.40 17.9

0.9 0.905 -179.9 0.87 56.3 0.014 -15.0 0.914 177.8 0.41 17.9

1.0 0.919 178.1 0.77 53.8 0.014 -7.8 0.928 176.0 0.16 17.4

1.1 0.930 175.9 0.69 48.8 0.012 -13.7 0.938 174.8 0.11 17.6

1.2 0.923 174.2 0.60 46.9 0.012 -11.0 0.927 172.9 0.59 17.0

1.3 0.919 172.9 0.54 42.6 0.010 -10.5 0.923 171.8 1.29 14.1

1.4 0.918 171.8 0.48 41.0 0.010 -4.7 0.922 170.6 1.62 12.2

1.5 0.918 170.6 0.44 37.6 0.011 -8.0 0.924 170.1 1.53 11.7

1.6 0.920 168.9 0.41 36.7 0.008 -5.5 0.927 168.7 2.46 10.4

1.7 0.918 167.5 0.36 33.6 0.008 4.3 0.922 167.9 3.27 8.5

1.8 0.927 166.2 0.35 30.9 0.009 12.5 0.935 165.9 1.95 10.3

1.9 0.922 164.1 0.31 28.2 0.007 20.9 0.932 164.9 3.67 7.9

2.0 0.923 162.6 0.30 27.8 0.007 32.4 0.942 163.0 3.08 8.6

2.1 0.928 159.9 0.26 25.2 0.007 48.5 0.928 161.8 4.46 6.2

2.2 0.926 158.6 0.25 23.2 0.006 36.8 0.938 160.0 4.89 6.3

2.3 0.929 156.6 0.22 20.0 0.008 50.0 0.935 157.6 4.01 5.4

2.4 0.925 154.5 0.22 18.0 0.009 45.1 0.945 156.2 3.01 6.2

2.5 0.928 152.2 0.20 18.1 0.007 61.4 0.941 154.5 4.77 4.8

2.6 0.933 150.4 0.20 17.2 0.009 56.3 0.938 152.5 3.43 5.2

2.7 0.930 148.4 0.16 15.0 0.011 70.0 0.933 150.3 4.13 2.5

2.8 0.929 146.2 0.17 11.1 0.013 59.4 0.952 148.1 2.01 5.4

2.9 0.931 144.4 0.16 11.6 0.013 74.0 0.937 146.9 3.01 3.2

3.0 0.933 142.6 0.15 10.0 0.014 67.5 0.950 145.0 2.10 4.3

1

Note:

1. Gain Calculation:

MAG =

|S

21

|

(

12

|

|S

K –

2

K - 1

MAG = Maximum Available Gain
MSG = Maximum Stable Gain

).

When K ≤ 1, MAG is undefined and MSG values are used.

MSG =

21

|

|S

, K =

|S

12

|

2

1 + | ∆ | - |S

2 |S

12 S21

11

2

| - |S22|

|

2

,

∆ = S

11 S22

- S21 S

12

RECOMMENDED P.C.B. LAYOUT (Units in mm)

4.0

1.7

Drain Gate

5.9

1.2

0.5

1.0

NE5510279A

Source

Through hole φ 0.2 × 33

0.5 0.5

6.1

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]

DATA SUBJECT TO CHANGE WITHOUT NOTICE

EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

07/05/2000