CEL NE5510279A User Manual

查询NE5510279A供应商

3.5 V OPERATION SILICON RF

POWER MOSFET FOR GSM1800

TRANSMISSION AMPLIFIERS

FEATURES

• HIGH OUTPUT POWER:

32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, P

• HIGH POWER ADDED EFFICIENCY:

45% TYP at V
f = 1.8 GHz, PIN = 25 dBm

• HIGH LINEAR GAIN:

10 dB TYP at VDS = 3.5 V, IDQ = 400 mA,
f = 1.8 GHz, PIN = 10 dBm

• SURFACE MOUNT PACKAGE:

5.7 x 5.7 x 1.1 mm MAX

• SINGLE SUPPLY:

2.8 to 6.0 V

DESCRIPTION

The NE5510279A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for

3.5 V GSM1800 handsets. Dies are manufactured using NEC's
NEWMOS technology (NEC's 0.6 µm WSi gate lateral
MOSFET) and housed in a surface mount package. This de­vice can deliver 32 dBm output power with 45% power added
efficiency at 1.8 GHz under the 3.5 V supply voltage, or can
deliver 31 dBm output power at 2.8 V by varying the gate
voltage as a power control function.

IN = 25 dBm
DS = 3.5 V, IDQ = 400 mA,

NE5510279A

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 79A

4.2 Max

Source

0.4 ± 0.15

Drain

0.2 ± 0.1

0.8 ± 0.15

4.4 Max

Gate

1.0 Max

Bottom View

Gate

5.7 Max

0.6 ± 0.15

5.7 Max

0.9 ± 0.2

APPLICATIONS

• DIGITAL CELLULAR PHONES

• OTHERS

1.5 ± 0.2

Source

Drain

1.2 Max

0.8 Max

3.6 ± 0.2

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE5510279A
PACKAGE OUTLINE 79A

SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS

IGSS Gate to Source Leakage Current nA - - 100 VGSS = 6.0 V
IDSS Drain to Source Leakage Current nA - - 100 VDSS = 8.5 V

VTH Gate Threshold Voltage V 1.0 1.35 2.0 VDS = 4.8 V, IDS = 1 mA

gm Transconductance S - 1.50 - VDS = 4.8 V, IDS1 = 500 mA, IDS2 = 700 mA

RDS(ON) Drain to Source On Resistance - - 0.27 - VGS = 6.0 V, VDS = 0.5 V

BVDSS Drain to Source Breakdown Voltage V 20 24 - IDSS = 10 A

California Eastern Laboratories

NE5510279A
PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C)

SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS

L Linear Gain dB — 10.0 — f = 1.8 GHz, PIN = 10 dBm,

G

V

DS = 3.5 V,IDQ = 400 mA

OUT(1) Output Power dBm 31.0 32.0 — f = 1.8 GHz, PIN = 25 dBm,

P

I

OP(1) Operating Current mA — 810 — VDS = 3.5 V,IDQ = 400 mA

ηADD(1) Power Added Efficiency % 37 45

POUT(2) Maximum Output Power dBm — 32.6 — f = 1.8 GHz, PIN = 25 dBm

IOP(2) Operating Current mA — 1,000 — VDS = 3.5 V,VGS = 2.5 V

POUT(3) Output Power at Lower Voltage dBm — 31.1 — f = 1.8 GHz, PIN = 25 dBm

IOP(3) Operating Current mA — 880 — VDS = 2.8 V,VGS = 2.5 V

GL Linear Gain dB — 10.0 — f = 1.8 GHz, PIN = 10 dBm,

VDS = 4.8 V,IDQ = 400 mA

POUT Output Power dBm — 35.0 — f = 1.8 GHz, PIN = 28 dBm,

IOP Operating Current mA — 1,120 — VDS = 4.8 V,IDQ = 400 mA

ηADD Power Added Efficiency % — 48 —

GL Linear Gain dB 35.0 35.0 35.0 f = 1.8 GHz, PIN = 10 dBm,

V

DS =6.0 V,IDQ = 400 mA

POUT Output Power dBm 37.0 f = 1.8 GHz, PIN = 30 dBm,

IOP Operating Current mA 1,400 VDS =6.0 V,IDQ = 400 mA

ηADD Power Added Efficiency % 49

ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)

SYMBOLS PARAMETERS UNITS RATINGS

VDS Drain Supply Voltage V 8.5
VGS Gate Supply Voltage V 6

ID Drain Current A 1.0
ID Drain Current (Pulse Test)

PIN Input Power

PT Total Power Dissipation W 2.4

TCH Channel T emperature °C 125

TSTG Storage Temperature °C -55 to +125

Notes:

1. Operation in excess of any one of these parameters may result
in permanent damage.

2. Duty Cycle 50%, ton = 1 ms.

3. Frequency = 1.8 GHz, VDS = 3.5 V.

3

2

A 2.0

dBm 30

ORDERING INFORMATION

PART NUMBER QTY

NE5510279A-T1 1 Kpcs/Reel

Note:
Embossed tape 12 mm wide. Gate pin faces perforation side of the
tape.

RECOMMENDED OPERATING CONDITIONS

SYMBOLS PARAMETERS TEST CONDITIONS UNITS MIN TYP MAX

VDS Drain Supply Voltage V 2.8 3.5 6.0
VGS Gate Supply Voltage V 0 2.0 2.5

ID Drain Current (Pulse Test) Duty Cycle 50%, Ton1ms A — — 1.5

PIN Input Power Frequency = 1.8 GHz, VDS = 3.5 V dBm 24 25 26

f Operating Frequency Range GHz 1.6 — 2.0

TOP Operating T emperature ˚C -30 25 85