CDIL TIP 102 MBR Datasheet
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP100/101/102
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP105/106/107
APPLICATIONS
·For industrial use
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP100 60
V
CBO
V
CEO
V
EBO
IC Collector current-DC 8 A
ICM Collector current-Pulse 15 A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
TIP101 80
TIP102
TIP100 60
TIP101 80
TIP102
Open emitter
Open base
V
100
V
100
IB Base current-DC 1 A
PC Collector power dissipation
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
TC=25℃ 80
Ta=25℃
W
2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Darlington Power Transistors TIP100/101/102
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP100 60
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
VBE Base-emitter on voltage IC=8A ; VCE=4V 2.8 V
I
CBO
I
CEO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=3A ,IB=6mA 2.0 V
Collector-emitter saturation voltage IC=8A ,IB=80mA 2.5 V
Collector cut-off current
Collector cut-off current
TIP101 80
TIP102
TIP100 VCB=60V, IE=0
TIP101 VCB=80V, IE=0
TIP102 V
TIP100 VCE=30V, IB=0
TIP101 VCE=40V, IB=0
TIP102 V
IC=30mA, IB=0
=100V, IE=0
CB
=50V, IB=0
CE
V
100
50
50
μA
μA
I
Emitter cut-off current VEB=5V; IC=0 2 mA
EBO
h
DC current gain IC=3A ; VCE=4V 1000 20000
FE-1
h
DC current gain IC=8A ; VCE=4V 200
FE-2
Cob Output capacitance IE=0 ; VCB=10V,f=0.1MHz 200 pF
2