Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL TRANSISTOR CSC458
TO-92
Plastic Package
Applications :
Low Frequency Amplifier
Medium Speed Switching
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current I
Emitter Current I
Collector Power Dissipation P
Junction Temperature T
Storage Temperature T
CBO
CEO
EBO
C
E
C
j
stg
30 V
30 V
5 V
100
mA
100
200 mW
150
°C
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain h
Collector-Emitter Saturation Voltage V
Base-Emitter Saturation Voltage V
Gain Bandwidth Product f
Collector Output Capacitance C
Turn - On Time t
Turn - Off Time t
Storage Time t
CSC458_Rev0_27062015E
Continental Device India Limited Data Sheet Page 1 of 6
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
FE
CE(sat)
BE(sat)
T
ob
on
off
stg
IC = 10µA, IE = 0 30 V
IC = 1mA, RBE = α 30 V
IE = 10µA, IC = 0 5 V
VCB = 18V, IE = 0 0.5 µA
VEB = 4V, IC = 0 1 µA
VCE = 1V, IC = 10mA 100 500
IC = 10mA, IB = 1mA 0.4 V
IC = 10mA, IB = 1mA 1 V
VCE = 10V, IC = 10mA 100 MHz
VCB = 10V, IE = 0,
4 pF
f=1MHz
IC = 10IB1 = -10IB2 =
10mA, VCC = 10V
IC = I
= -IB2 = 20mA,
B1
80 ns
300 ns
260 ns
VCC = 5V
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
Small Signal h Parameters
DESCRIPTION SYMBOL
Input Impedance h
Voltage Feedback Ratio h
Current Transfer Ratio h
Output Admittance h
Classification of h
FE
Rank B C D
Range 100-200 160-320 250-500
ie
re
fe
oe
TEST CONDITION
TYP UNIT
VCE = 5V, 16.5 kΩ
IC = 0.1mA, 70 x 10
f = 270 Hz 130
11 µS
-6
CSC458_Rev0_27062015E
Continental Device India Limited Data Sheet Page 2 of 6
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