CDIL SA 733 Datasheet
Continental Device India Pvt. Limited
V
An IATF 16949, ISO9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA733
TO-92
Plastic Package
RoHS compliant
APPLICATION: Low Frequency Amplifier
Complementary to CSC945
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise specified)
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage B
Collector-Emitter Voltage
B
Emitter Base Voltage BV
Collector Current (DC)
Base Current (DC)
Total Power Dissipation @ T
Operating Storage JunctionTemperature Range
= 25°C P
amb
T
VCBO
VCEO
EBO
I
C
I
B
tot
, T
j
stg
60 V
50 V
5 V
100 mA
20 mA
500 mW
-55 to +150 °C
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
Collector Base Voltage B
Emitter Base Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain h
Collector Emitter Saturation Voltage
Base Emitter On Voltage
B
B
I
I
V
CE(sat)
V
VCEO
VCBO
VEBO
CBO
EBO
FE
BE(on)
1
IC=100mA,IB=10mA
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
Common Base Output Capacitance
Noise Figure NF
f
T
C
ob
VCE=6V, IC=10mA
VCB=10V, IE=0, f=1MHz
V
Rs=10kΩ, f=100Hz
Note:
h
CLASSIFICATION
FE
RQ P K
90-180 135=270 200-400 300-600
Note:
For PNP device voltage and current values will be negative (-).
IC=1mA,IB=0
ALUE
MIN TYP MAX
50 -- -- V
UNIT
IC=100µA,IE=0 60 -- -- V
IE=10µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
5----V
-- -- 0.1 µA
-- -- 0.1 µA
VCE=6V,IC=1mA 90 -- 600 --
-- 0.9 0.3 V
IC=1mA,V
CE=
6V
0.6 0.25 0.7 V
100 -- -- MHz
-- -- 6 pF
=6V, IC=0.3mA
CE
-- 9 20 dB
CSA733
Rev01_18042022E
Continental Device India Pvt. Limited
Data Sheet Page 1 of 5
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
TYPICAL CHARACTERISTICS CURVES
Fig 1: Base Emitter On Voltage Fig 3: DC Current Gain
Fig 2: Current Gain-Bandwidth Product
Fig 4: Base-Emitter Saturation Voltage
Collector-Emitter Saturation
CSA733
Rev01_18042022E
Continental Device India Pvt. Limited
Data Sheet Page 2 of 5
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