CDIL MPSA 94 Datasheet

FEATURES

(1)

FE(2)

FE(3)

CE(sat)

CE(sat)

BE(sat)

High

voltage

MARKING:A94

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Parameter Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

stg

-400

-400

-5

-200
625
150

-55-150

V
V
V

mA

mW

Plastic-Encapsulate Transistors

(PNP)

A94

1. EMITTER

2. BASE TO-92

3. COLLECTO

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter sataration voltage

Transition frequency

V

CBO

V

CEO

V

EBO

I

CBO

I

CEO

I

EBO

h

FE
h
h

V
V
V

f

T

IC= -100μA , IE=0
IC= -1mA , IB=0
IE=-100μA, IC=0
VCB=-400 V, IE=0
VCE=-400 V
VEB= -4V, IC=0
VCE=-10V , IC=-10mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-100mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB= -1mA

VCE=-20V, IC=-10mA ,f
=30MHz

-400 V

-400 V

-5 V

80 300
70
60

50 MHz

-0.1 uA

-5 uA

-0.1 uA

-0.2 V

-0.3 V

-0.75 V

CLASSIFICATION OF HFE

Rank

Range

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

A

80-100 100-150 150-200 200-250

B

1

B

2

C

Page:P2-P1

A94 Typical Characteristics

Plastic-Encapsulate Transistors

-100uA

100uA

-90uA

90uA

——

CEsat

℃

℃

-80uA

80uA

V

CE

-70uA

70uA

-60uA

60uA

-50uA

50uA

I

C

COMMON EMITTER

=25

T

a

-40uA

40uA

-30uA

30uA

-18

18

-16

16

-14

14

(mA)

C

-12

12

-10

10

-8

8

-6

6

-4

4

COLLECTOR CURRENT I

-2

2

-0

0

-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22

IC ——

COLLECTOR-EMITTER VOLTAGE VCE (V)

V

-10

(V)

-1

CEsat

VOLTAGE V

-0.1

COLLECTOR-EMITTER SATURATION

Ta=100

Ta=25

℃

-20uA

20uA

IB=-10uA

1000

FE

100

hFE ——

℃

Ta=100

Ta=25

℃

I

C

COMMON EMITTER

= -10V

V

CE

DC CURRENT GAIN h

10

-1 -10 -100

-1000

COLLECTOR CURRENT IC (mA)

V

BEsat

——

Ta=25

I

C

℃

-200

(mV)

BEsat

-500

Ta=100

℃

VOLTAGE V

BASE-EMITTER SATURATION

-0.01

-1 -10 -100

COLLECTOR CURRENT IC (mA)

β=10

-200

-200

-1 -10 -100

COLLECTOR CURRENT IC (mA)

β=10

-200

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

Page:P2-P2