CDIL MPSA 92 Datasheet
UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE PNP
TRANSISTOR
DESCRIPTION
The UTC MPSA92/93 are high voltage PNP
transistors, designed for telephone signal switching
and for high voltage amplifier.
FEATURES
* High Collector-Emitter voltage:
VCEO=-300V(UTC MPSA92)
VCEO=-200V(UTC MPSA93)
*Collector Dissipation:
Pc(max)=625mW
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage
UTC MPSA92
UTC MPSA93
Collector-Emitter Voltage
UTC MPSA92
UTC MPSA93
Emitter-Base Voltage VEBO -5 V
Collector Dissipation (Ta=25°C)
Derate Above 25℃
Collector Current Ic -500 mA
Collector Dissipation (Tc=25°C)
Derate Above 25℃
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
UTC MPSA92
UTC MPSA93
Collector-Emitter Breakdown Voltage
UTC MPSA92
UTC MPSA93
Emitter-Base Breakdown Voltage BVEBO IE=-100µA, Ic=0 -5 V
Collector Cut-Off Current
UTC MPSA92
UTC MPSA93
BVCBO Ic=-100µA, IE=0
BVCEO Ic=-1mA, IB=0
ICBO
1
1:EMITTER 2:BASE 3:COLLECTOR
VCBO
VCEO
Pc 625 5 mW
Pc 1.5
(Tj=25°C,unless otherwise specified)
VCB=-200V, IE=0
VCB=-160V, IE=0
-300
-200
-300
-200
12
-300
-200
-300
-200
TO-92
V
V
mW/℃
W
mW/℃
-0.25
-0.25
V
V
µA
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-019,A
UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Emitter Cut-Off Current IEBO VEB=-3V, Ic=0 -0.10 µA
DC Current Gain(note) hFE VCE=-10V, Ic=-1mA
VCE=-10V, Ic=-10mA
VCE=-10V, Ic=-30mA
Collector-Emitter Saturation Voltage VCE(sat)1 Ic=-20mA, IB=-2mA -0.5 V
Base-Emitter Saturation Voltage VBE(sat)1 Ic=-20mA, IB=-2mA -0.90 V
Current Gain Bandwidth Product fT VCE=-20V, Ic=-10mA, f=100MHz 50 MHz
Collector Base Capacitance
UTC MPSA92
Ccb VCB=-20V, IE=0
f=1MHz
UTC MPSA93
Note:Pulse test: PW<300µs, Duty Cycle<2%, VCE(SAT)1<200mV(Class SIN)
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 DC Current Gain
3
10
FE
2
10
1
10
DC current Gain,H
0
10
-100-101-102-103-10
VCE=-10V
Collector current, Ic(mA)
4
Fig.2 Saturation Voltage
4
-10
Ic=10*I
B
VCE(sat)
3
-10
2
-10
VCE(sat),VBE(sat) (mV)
1
-10
-100-101-102-103-10
VBE(sat)
Collector current, Ic(mA)
4
60
80
80
2
10
(pF)
1
CB
10
(pF),C
IB
C
-1
-10
Collector-Base voltage(V)
6
8
Fig.3 Capacitance
C
IB
C
CB
0
-10
1
-10
-10
pF
2
Fig.4 Active-region safe
3
-10
2
-10
1
-10
625mW Thermal
limitation Ta=25°C
bonding breakdown
Collector current, Ic(mA)
limitation Tj=150°C
1
-10
0
-10
Collector-Emitter voltage ( v)
operating area
D
C
1.5
limitation Tc
W T
he
r
mal
=
2
5°
C
1
-10
1
MPSA92
-10
0
.
.
1
0
m
m
s
s
MPSA93
product(MHz)
Current gain bandwidth
2
3
-10
Fig.5 Current Gain
Bandwidth product
3
10
2
10
1
10
0
-10
Collector current, Ic(mA)
-10
VCE=-20V
f=100MHz
1
2
-10
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-019,A
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