CDIL MPSA 44 Datasheet
Complementary of MPSA44 is MPSA94
ABSOLUTE MAXIMUM RATINGS
Derate Above 25ºC
Derate Above 25ºC
Temperature Range
MPSA44
MPSA45
MPSA44
MPSA45
MPSA44
MPSA45
E
C
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44
MPSA45
TO-92
Plastic Package
B
High Voltage Transistors
DESCRIPTION UNITS
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current mA
Power Dissipation @ Ta=25ºC
Power Dissipation @ Tc=25ºC
Operating And Storage Junction
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
Tj, T
stg
MPSA44 MPSA45
500 400
400 350
6.0
300
625
5.0
1.5
12
- 55 to +150
mW
mW/ºC
W
mW/ºC
ºC
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
R
R
th (j-c)
th (j-a)
83.3
200
ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MAX UNITS
Collector Emitter Voltage
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Of Current
V
CEO
V
CES
V
CBO
V
EBO
I
CBO
VCB=400V, IE=0, MPSA44
IC=1mA, IB=0
IC=100µA, VBE=0
IC=100µA, IE=0
IE=10µA, IC=0
VCB=320V, IE=0, MPSA45
Collector Cut Off Current
I
CES
VCE=400V, VBE = 0, MPSA44
VCE=320V, VBE = 0, MPSA45
Emitter Cut off Current
I
EBO VEB
=4V, IC = 0
MIN
400
350
500
400
500
400
6
V
V
V
V
V
V
V
100 nA
100 nA
500 nA
500 nA
100 nA
Continental Device India Limited
Data Sheet Page 1 of 5
NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44
DESCRIPTION
SYMBOL
TEST CONDITION
MAX
UNITS
E
C
MPSA45
TO-92
Plastic Package
B
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
MIN
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
*V
*V
*h
FE
CE (sat)
BE (sat)
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
40
50
45
40
200
0.40 V
0.50 V
0.75 V
0.75 V
DYNAMIC CHARACTERISTICS
DESCRIPTION SYMBOL TEST CONDITION MAX UNITS
Output Capacitance
Input Capacitance
Small Signal Current Gain
C
obo
C
ibo
h
fe
VCB=20V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
IC=10mA, VCE=10V, f=10MHz
MIN
7 pF
130 pF
2
*Pulse test: Pulse Width <300µµs, Duty Cycle<2%
Continental Device India Limited
Data Sheet Page 2 of 5
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