CDIL MPSA 42 Datasheet

MPSA42 / MMBTA42 / PZTA42
MMBTA42MPSA42
C
E
C
B
E
TO-92
SOT-23
Mark: 1D
B
PZTA42
C
C
B
SOT-223
NPN High Voltage Amplifier
This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter V ol tage 300 V Collector-Base Voltage 300 V Emitter-Base Volt age 6.0 V Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150
°
C
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSA42 *MMBTA42 **PZTA42
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissip ation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 Thermal Resistance , Junctio n to Ambient 200 357 125
625
5.0
350
2.8
2
.
1,000
8.0
mW
mW/°C
C/W
°
C/W
°
µ
µ
NPN High V oltage Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
CE(
sat
V
sat
BE(
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 300 V Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
= 100 µA, IC = 0
I
E
300 V
6.0 V Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 Emitte r-Cutoff Current VEB = 6.0 V, IC = 0 0.1
DC Current Gain IC = 1.0 mA, VCE = 10 V
I
= 10 mA, VCE = 10 V
C
I
= 30 mA, VCE = 10 V
Collector-Emitter Saturatio n Voltage IC = 20 mA, IB = 2.0 mA 0.5 V
)
Base-Emitter Saturation Voltage IC = 20 mA, IB = 2.0 mA 0.9 V
)
C
Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
25 40 40
50 MHz
f = 100 MHz
Collector-Base Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 3.0 pF
A A
MPSA42 / MMBTA42 / PZTA42
Spice Model
NPN (Is=34.9f Xti=3 Eg=1.11 V af=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2 Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n Itf=5 Vtf=20 Xtf=150 Rb=10)
T ypical Characteristics
DC Current Gain
vs Collect or Cur re n t
140 120 100
80 60 40
FE
h - DC CU RRENT GA I N
20
0.1 1 10 100
125 °C
25 °C
V = 5V
CE
I - COLLEC T OR CU RREN T (mA)
C
- 40 °C
Col le ctor-Emitter Satur ation
Vo l t ag e vs Col le cto r Current
0.3
= 10
β
0.25
0.2
0.15
0.1
0.05
0.1 1 10 100
CESAT
V - COLL E CTO R-EMIT T ER VOLTAG E (V)
- 40 °C
I - COLLECTOR CURRENT (mA)
C
125 °C
25 °C
3
Typical Characteristics (continued)
MPSA42 / MMBTA42 / PZTA42
NPN High V oltage Amplifier
(continued)
Bas e-Emitter Satura tion
V o lt age vs Col l ect or Cu rren t
1
0.8
- 40 °C
0.6
0.4
BESAT
0.2
V - BASE-EMITTER VOLTAGE (V)
0.1 1 10 100
I - COLLECTOR CURRENT ( mA)
C
25 °C
125 °C
β
Collector-Cutoff Current vs Am bient Temperature
100
V = 150V
CB
10
CBO
I - COLLECTOR CURRENT (nA)
1
25 50 75 100 125 150
T - AM BI ENT TE MPE RAT U RE ( C)
A
°
= 10
Base-Em itter ON Vol tag e vs
Collector Current
1
V = 1V
CE
0.8
- 40 °C
0.6
0.4
0.2
BE(ON)
0.1 1 10 100
V - BASE-EMITTER ON VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
Collector-Base and Emitter-Base
Ca pacitance vs Reverse B i as Voltage
100
50
20 10
5
CAPACITANCE (pF)
2 1
1 10 100 1000
C
eb
RE VER S E BIAS VO LTAG E (V)
C
cb
Power Dissipation vs
Ambient Temperature
1
0.75
TO-92
0.5
SOT-23
0.25
D
P - POWER DISSIPATION (W)
0
0 255075100125150
SOT-223
TEMPERATURE ( C)
o
TO-92 Tape and Reel Data
TO-92 Packaging Configuration: Figure 1.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
SPEC REV:
D9842
QA REV:
HTB:B
QTY:
10000
SPEC:
B2
(FSCINT)
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN:
QTY: 2000
SPEC:
N/F: F (F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Quantity EOL code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
Unit w eight = 0.2 2 gm Reel weight with componen ts = 1.04 kg Amm o weight with components = 1.02 kg Max q uantity per intermedia te box = 10,000 units
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
L34Z
DESCRIPTION
TO-18 OPTION STD NO LEAD CLIP
TO-5 OPTION STD NO LEAD CLIP TO-92 STANDARD
STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98
NO LEADCLIP
NO LEADCLIP
LEADCLIP
DIMENSION
327mm x 158mm x 135mm
Immediate Box
Customized Label
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
2.0 K / BOX
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
5 Reels per
Intermediate Box
F63TNR Label
Customized Label
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
5 Ammo boxes per
Intermediate Box
F63TNR Label
BULK OPTION
See Bulk Packing Information table
FSCINT Label
2000 units per EO70 box for
std option
375mm x 267mm x 375mm
Intermediate Box
333mm x 231mm x 183mm
Intermediate Box
Anti-static
Bubble Sheets
114mm x 102mm x 51mm
FSCINT Label
Customized Label
FSCINT Label
Customized Label
Immediate Box
530mm x 130mm x 83mm
FSCINT Label
©2001 Fairchild Semiconductor Corporation
Intermediate box
ustomized
C Label
10,000 units maximum
per intermediate box
for std option
5 EO70 boxes per intermediate Box
March 2001, Rev. B1
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style Configuration: Figure 2.0
Machine Option “A” (H)
Style “A”, D26Z, D70Z (s/h )
TO-92 Radial Ammo Packaging Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
Machine Option “E” (J)
Style “E”, D27 Z, D71 Z (s/ h)
FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B
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