This device is designed for application as a video output to
drive color CRT and other high voltage applications. Sourced
from Process 48.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
SymbolParameterValueUnits
V
CES
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter V ol tage300V
Collector-Base Voltage300V
Emitter-Base Volt age6.0V
Collector Current - Continuous500mA
Operating and Storage Junction Temperature Range-55 to +150
°
C
E
Thermal Characteristics TA = 25°C unless otherwise noted
SymbolCharacteristicMaxUnits
MPSA42*MMBTA42**PZTA42
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
1997 Fairchild Semiconductor Corporation
Total Device Dissip ation
Derate above 25°C
Thermal Resistance, Junction to Case83.3
Thermal Resistance , Junctio n to Ambient200357125
625
5.0
350
2.8
2
.
1,000
8.0
mW
mW/°C
C/W
°
C/W
°
µ
µ
NPN High V oltage Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
SymbolParameterTest ConditionsMinMaxUnits
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
CE(
sat
V
sat
BE(
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage*IC = 1.0 mA, IB = 0300V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Unit w eight = 0.2 2 gm
Reel weight with componen ts = 1.04 kg
Amm o weight with components = 1.02 kg
Max q uantity per intermedia te box = 10,000 units