CDIL ER 900 Datasheet
SILICON DIAC
BIDIRECTIONAL TRIGGER DIODES
DB3, DB4
GLASS PASSIVATED PNPN DEVICE
DO- 35
Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be
used in Conjunction with Triacs for Simplified Gate Control Circuits or as a Starting
Element in Fluorescent Lamp Ballasts
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC unless specified otherwise))
BO
O
BO
r
B
∆
1=[I
to IF=10mA]
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
Glass Axial Package
DESCRIPTION SYMBOL VALUE UNIT
Power Dissipation on Printed Circuit (L=10mm) (Ta=50oC)
Repetitive Peak on-State Current (tp=20µµs, f=100Hz)
Storage Temperature Range
Junction Temperature Range
P
I
TRM
T
tot
stg
T
j
150 mW
2 A
- 40 to +125 ºC
- 40 to +110 ºC
THERMAL RESISTANCE
Junction to Ambient in free air 400 ºC/W
Junction to Leads 150 ºC/W
R
R
th (j-a)
th (j-l)
ELECTRICAL CHARACTERISTICS (Tj=25ºC unless specified otherwise)
DESCRIPTION TEST CONDITIONS
* Breakover Voltage
SYMBOL MIN MAX UNIT
V
** C = 22nF
see diagram 1
Breakover Voltage Symmetry
[I+VBOI-I-VBOI]
DB3
DB4
** C = 22nF
28 36 V
35 45 V
+ 3 V
see diagram 1
* Dynamic Breakover Voltage
I∆V+ I
BO
5 V
see diagram 1
* Output Voltage
* Breakover Current
* Rise Time
* Leakage Current
V
I
t
I
see diagram 2
** C = 22nF
see diagram 3
VB = 0.5 VBO max
5 V
50
µA
TYP 1.5
10
µA
µs
see diagram 1
* Electrical characteristic applicable in both forward and reverse directions
** Connected in parallel with the devices.
DB3_DB4Rev_1 190402E
Continental Device India Limited
Data Sheet Page 1 of 4
DIAGRAM 1 :Current-voltage characteristics
Power dissipation versus ambient temperature
versus junction temperature
+ IF
DB3/DB4
(maximum values)
10mA
IBO
IB
0.5 VBO
+ VV-
V
VBO
- IF
DIAGRAM 2 :Test circuit for output voltage
220V
50 HZ
10k 500k
~
0.1uF
D.U.T
R=20 ohmVO
DIAGRAM 3 : Test circuit see diagram 2.
Adjust R for Ip=0.5A
160
140
120
100
80
60
P (mW)
40
20
0
0 10 20 30 40 50 60 70 80 90 100 110 120
Tamb (o C)
Relative variation of VBO
(typical values)
1.1
1.08
C)
O
1.06
1.04
VBO(Tj)
1.02
VBO(Tj=25
1
25 50 75 100
Tj (o C)
Peak pulse current versus pulse duration (maximum
value)
10
90 %
Ip
10%
t
r
DB3_DB4Rev_1 190402E
Continental Device India Limited
F=100 HZ
Tj intial = 25 OC
(A)
TRM
I
1
0.1
0.01
10 100 1000 10000
tp (us)
Data Sheet Page 2 of 4
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