NPN SILICON PLANAR TRANSISTORS
BSX45
BSX46
BSX47
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BSX45
BSX46
BSX47
UNITS
Derate Above 25º C
Derate Above 25º C
Temperature Range
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
BSX45
BSX46
BSX47
UNITS
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
AMPLIFIER TRANSISTORS
TO-39
Metal Can Package
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25º C
Power Dissipation@ Tc=25º C
Operating And Storage Junction
Junction to Ambient
Junction to Case
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
V
CEO
V
CES
V
EBO
I
C
P
D
P
D
Tj, T
stg
R
th(j-a)
R
th(j-c)
V
* IC=30mA,IB=0
CEO
V
V
I
CES
CES
EBO
IC=100µA,VBE=0
IE=100µA, IC =0
VCE=60V,VBE=0
VCE=80V,VBE=0
40 60 80 V
80 100 120 V
7.0 V
1.0 A
1.0 W
5.71 mW/ ºC
5.0 W
28.6 mW/ ºC
-65 to +200 ºC
200 ºC/W
35 ºC/W
>40
>80
>60 >80 V
>100 >120 V
>7.0 V
<10
<10
<10
nΑ
nΑ
I
CES
Tc =150ºC
VCE=60V,VBE=0
VCE=80V,VBE=0
Emitter Cut off Current
Continental Device India Limited Data Sheet Page 1 of 4
I
EBO
VEB=5V, IC=0
<10
<10
<10
<10
µA
µA
nΑ
NPN SILICON PLANAR TRANSISTORS BSX45
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
BSX46
BSX47
TO-39
DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS
DC Current Gain
Base Emitter on Voltage
Collector Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
Emitter Base Capacitance
Output Capacitance
BSX45
BSX46 <20 pF
BSX47 <15 pF
h
FE
IC=0.1mA,VCE=1V
Group -6 >10
Group -10 >15
Group -16 >25
h
FE
IC=100mA,VCE=1V*
Group -6 40 to 100
Group -10 63 to 160
Group -16 100 to 250
h
FE
IC=500mA,VCE=1V*
Group -6 >15
Group -10 >25
Group -16 >35
V
* IC=100mA, VCE=1V
BE(on)
IC=500mA, VCE=1V
IC=1A, VCE=1V
V
* IC=1A, IB=0.1A
CE(sat )
f
IC=50mA, VCE=10V
T
f=20MHz
C
C
VBE =0.5V, f=1MHz
ib
VCB=10V, f=1MHz
ob
<1.0 V
0.75 to 1.5 V
<2.0 V
<1.0 V
>50 MHz
<80 pF
<25
pF
Turn on time
Turn off time
t
on
t
off
IC=100mA, IB1=-IB2=
5mA <850 ns
*Pulse Test: Pulse Duration =300µµs, Duty Cycle =1%
Continental Device India Limited Data Sheet Page 2 of 4
<200 ns
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