CDIL BSR 14 SMD Datasheet

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SOT-23 Formed SMD Package

SILICON PLANAR EPITAXIAL TRANSISTORS

N–P–N silicon transistors

Marking

BSR13 = U7
BSR14 = U8

Pin configuration

1 = BASE
2 = EMITTER
3 = COLLECTOR

BSR13
BSR14

3

1

2

ABSOLUTE MAXIMUM RATINGS

Collector–base voltage (open emitter) V
Collector–emitter voltage (open base) V
Emitter–base voltage (open collector) V
Collector current (d.c.) I
Total power dissipation up to T

= 25 °C P

amb

Junction temperature T
D.C. current gain

= 150 mA; VCE = 10 V h

I

C

= 500 mA; VCE = 10 V h

I

C

Transition frequency at f

= 20 mA; VCE = 20 V f

I

C

=

100 MHz

BSR13 BSR14

max. 60 75 V

CB0

max. 30 40 V

CE0

max. 5 6 V

EB0

max. 800 mA

C

max. 250 mW

tot

max. 150 ° C

j

FE

>30 40

FE

> 250 300

T

100 to 300

MHz

Continental Device India Limited Data Sheet Page 1 of 4

BSR13
BSR14

RATlNGS (at TA = 25°C unless otherwise specified)
Limiting values

Collector–base voltage (open emitter) V
Collector–emitter voltage (open base) V
Emitter–base voltage (open collector) V
Collector current (d.c.) I

CB0
CE0
EB0

C

Total power dissipation

up to T
Storage temperature T
Junction temperature T

= 25 °C P

amb

tot
stg

j

THERMAL RESISTANCE

From junction to ambient R

th j–a

CHARACTERISTICS

= 25 °C unless otherwise specified

T

j

Collector cut–off current BSR13 BSR14

= 0; VCB = 50 V I

I

E

= 0; VCB = 60 V I

I

E

= 0; VCB = 50V; Tj = 150°C I

I

E

= 0; VCB = 60V; Tj = 150°C I

I

E

= 3 V; VCE = 60 V I

V

EB

CB0
CB0
CB0
CB0
CEX

Base current

with reverse biased emitter junction

= 3 V; VCE = 60 V I

V

EB

BEX

Emitter cut–off current

= 0; VEB = 3 V I

I

C

EB0

Saturation voltages

= 150 mA; I

I

C

I

= 500 mA; lB = 50 mA V

C

15 mA V

B:

V
V

V

CEsat
BEsat
BEsat

CEsat
BEsat

D.C. current gain

I

= 0,1 mA; VCE = 10 V h

C

= 1 mA; VCE = 10 V h

I

C

= 10 mA; VCE = 10 V h

I

C

= 150 mA; VCE = 10 V h

I

C

= 150 mA; VCE = 1 V h

I

C

= 500 mA; VCE = 10 V BSR13; R h

I

C

= 500mA; VCE = 10V BSR14; R h

I

C

FE
FE
FE
FE
FE
FE
FE

Transition frequency at f = 100 MHz

= 20 mA; VCE = 20 V BSR13; R f

I

C

I

20 mA; VCE = 20 V BSR14; R f

C:

T
T

Collector capacitance at f = 1 MHz

= Ie = 0; VCB = 10 V C

I

E

c

Small signal current gain

= 1 mA; VCE = 10 V; f = 1 KHz; BSR14 h

I

C

= 10 mA; VCE = 10 V; f = 1 KHz; BSR13 h

I

C

fe
fe

BSR13 BSR14

max. 60 75 V
max. 30 40 V
max. 5 6 V
max. 800 mA

max. 250 mW

–55 to +150 ° C

max. 150 ° C

= 500 K/W

<30 –nA
<– 10nA
<10 – µA
<– 10 µ A
<– 10nA

<– 20nA

<30 15nA

< 400 300 mV
< 1.3 – V

– 0,6 to 1,2 V

< 1.6 1.0 V
< 2.6 2.0 V

>35
>50
>75

100 to 300
>50
>30
>40

> 250
> 300

< 8pF

50 to 300
75 to 375

MHz
MHz

Continental Device India Limited Data Sheet Page 2 of 4