CDIL BF 959 Datasheet
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
BF959
TO-92
Plastic Package
RoHS compliant
GENERAL DESCRIPTION:
BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C Unless otherwise specified)
PARAMETER SYMBOL VALUE UNIT
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage V
Collector Current Continuous
Power Dissipation @ T
=25ºC
a
Derate Above 25ºC
Power Dissipation @ T
=25ºC
c
Derate Above 25ºC
Operating And Storage Junction Temperature
Range
T
V
CEO
V
CBO
EBO
I
C
P
D
P
D
, T
j
stg
20 V
30 V
3V
100 mA
625 mW
5.0 mW/°C
1.5 W
12 mW/°C
-55 to +150 °C
THERMAL RESISTANCE
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction to case R
BF959
Rev01 29032022E
Continental Device India Pvt. Limited
Data Sheet Page 1 of 6
R
th(j-a)
th(j-c)
200 °C/W
83.3 °C/W
Continental Device India Pvt. Limited
An IATF 16949, ISO9001 and ISO 14001 Certified Company
ELECTRICAL CHARACTERISTICS at (Ta = 25 °C Unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage BV
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
DC Current Gain h
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
BV
BV
I
V
BE(sat)
V
CE(sat)
CBO
FE
DYNAMIC CHARACTERSTICS
Transition Frequency f
Common Emitter Feedback
Capacitance
C
Noise Figure NF
CEO
CBO
EBO
IC=1mA,IB=0 20 -- -- V
IC=10µA,IE=0
IE=10µA, IC=0
VCB=20V, IE = 0
VCE=10V,IC=5mA
V
=10V,IC=20mA 40 -- --
CE
IC=30mA,IB=2mA
IC=30mA,IB=2mA
IC=20mA, VCE=10V, f=100MHz
T
I
=30mA, VCE=10V, f=100MHz
C
re
VCB=10V, f=10MHz
I
=4mA, VCE =10V, Rs=50Ω,
C
f=200MHz
MIN TYP MAX
30 -- -- V
3---- V
-- -- 100 nA
35 -- --
-- -- 1.0 V
-- -- 1.0 V
700 -- -- MHz
600 -- -- MHz
-- 0.65 -- pF
-- 3.0 -- dB
VALUE
UNIT
BF959
Rev01 29032022E
Continental Device India Pvt. Limited
Data Sheet Page 2 of 6
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