CDIL BF821,BF823, BF823 SMD Datasheet
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
SILICON EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BF821 = 1W
BF823 = 1Y
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
BF821
BF823
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter) –V
Collector–emitter voltage (open base) –V
Collector–emitter voltage (R
= 2,7 kW )–V
BE
Collector current (peak value) –I
Total power dissipation up to T
= 25 °C P
amb
Junction temperature T
D.C. current gain
= 25 mA; –VCE = 20 V h
–I
C
Feedback capacitance at f = 1 MHz
= 0; –VCE = 30 V C
· I
C
Transition frequency at f = 35 MHz
= 10 mA; –VCE = 10 V f
–I
C
BF821 BF823
max. 300 250 V
CB0
max. — 250 V
CE0
max. 300 – V
CER
max. 100 mA
CM
max. 250 mW
tot
max. 150 ° C
j
>50
FE
< 1,6 pF
re
>60
T
MHz
Continental Device India Limited Data Sheet Page 1 of 3
BF821
BF823
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BF821 BF823
Collector–base voltage (open emitter) –V
Collector–emitter voltage (open base) –V
Collector–emitter voltage (R
= 2,7 kW )–V
BE
Emitter–base voltage (open collector) –V
Collector current (d.c.) –I
Collector current (peak value) –I
Total power dissipation
up to T
= 25 °C P
amb
Storage temperature T
Junction temperature T
THERMAL RESISTANCE
From junction to ambient R
CHARACTERISTICS
= 25 °C unless otherwise specified BF821 BF823
T
j
Collector cut–off current
= 0; –VCB = 200V –I
I
E
Collector–emitter voltage
= 2,7 kW ; VCE = 250 V –I
R
BE
= 2,7kW ; VCE = 200V; Tj = 150°C –I
R
BE
Saturation voltage
= 30 mA; –lB = 5 mA –V
–I
C
D.C. current gain
= 25 mA; –VCE = 20 V h
I
C
Transition frequency at f = 35 MHz
= 10 mA; —VCE = 10 V f
–I
C
Feedback capacitance at f = 1 MHz
= 0; –VCE = 30 V Cre < 1, 6 pF
I
C
max. 300 250 V
CB0
max. — 250 V
CE0
max. 300 — V
CER
max. 5 V
EB0
max. 50 mA
C
max. 100 mA
CM
max. 250 mW
tot
stg
max. 150 ° C
j
= 500
th j–a
<10 10nA
CB0
<50 50nA
CER
<10 10mA
CER
< 0,8 V
CEsat
>50
FE
>60
T
–55 to +150 ° C
K/W
MHz
Continental Device India Limited Data Sheet Page 2 of 3
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