
DISCRETE SEMICONDUCTORS
BF820; BF822
NPN high-voltage transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 16

NXP Semiconductors Product data sheet
NPN high-voltage transistors BF820; BF822
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
complements: BF821; BF823.
PNP
MARKING
T YPE NUMBER MARKING CODE
(1)
BF820 1V*
BF822 1X*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
PACKAGE
TYPENUMBER
NAME DESCRIPTION VERSION
BF820 − plastic surface mounted package; 3 leads SOT23
BF822 − plastic surface mounted package; 3 leads SOT23
2004 Jan 16 2