CDIL BF 494 Datasheet
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494
BF495
TO-92
Plastic Package
High Voltage Video Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL Value UNITS
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current(peak value)
Total Power dissipation up to
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
tot
20 V
30 V
5V
30 mA
30 mA
300 mW
Tamb = 25ºC mW/ºC
T
Operating And Storage Junction
, T
j
stg
-55 to +150 ºC
Temperature Range
THERMAL RESISTANCE
Junction to ambient
R
th(j-a)
420 K/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION Min Max UNITS
Collector Cut- off Current
Collector Cut - off Current
EmitterCut off Current
Base Emitter Voltage
I
I
I
V
BE(ON)
CBO
CBO
EBO
VCB=20V,IE=0
500 nA
VCB=20V,IE=0
Ta =150 ºC 4.0
VEB=4V, IC=0
VCE=10V,IC=1mA
0.65 0.74 V
500 nA
A
DC Current Gain
BF494
h
FE *
IC=1mA,VCE=10V
67 221
BF494A 200 500
BF494B 110 215
BF 495 35 125
BF 495C 65 135
BF 495D 40 85
Continental Device India Limited
Data Sheet Page 1 of 4
NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494
BF495
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION Min Max UNITS
DYNAMIC CHARACTERISTICS
Transition Frequency
f
IC=1mA, VCE=10V
T
120 MHz
Feedback Capacitance
C
VCE=10V, IC=1mA
re
f=4.5MHz
decreases by about 1.7mV/K with increasing temperature.
*V
BE
1.0 pF
Continental Device India Limited
Data Sheet Page 2 of 4
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