Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF421
VIDEO TRANSISTORS BF423
TO-92
Plastic Package
High Voltage Video Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL 423 421 UNITS
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25ºC
V
CEO
V
CBO
V
EBO
I
C
P
D
250 300 V
250 300 V
5V
500 mA
800 mW
Derate Above 25ºC 6.4 mW/ºC
Power Dissipation@ Tc=25ºC
P
D
2.75 W
Derate Above 25ºC 22 mW/ºC
T
Operating And Storage Junction
, T
j
stg
-55 to +150 ºC
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
R
R
th(j-a)
th(j-c)
156 ºC/W
45 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 423 421 UNITS
Collector Emitter Voltage*
Collector Base Voltage
EmitterBase Voltage
Collector-Cut off Current
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
h
V
CE(sat)IC
V
BE(sat) IC
IC=1.0mA,IB=0
IC=100µA.IE=0
IE=100µA, IC=0
VCB=200V,IE=0
VEB=5.0V, IC=0
IC=25mA,VCE=20V
FE
=20mA,IB=2mA
=20mA,IB=2mA
>250 >300 V
>250 >300 V
>5 >5 V
<10 <10 nA
<100 <100 nA
>50 >50
<0.5 <0.5 V
<2 <2 V
Continental Device India Limited
Data Sheet Page 1 of 4
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF421
VIDEO TRANSISTORS BF423
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION 423 421 UNITS
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
Feedback Capacitance
*Pulse Condition: = Width <
300us, Duty Cycle < 2.0%.
f
C
IC=10mA, VCE=10V
T
f=50MHz
VCB=30V, IE=0
re
f=1MHz
>60 >60 MHz
<2.8 <2.8 pF
Continental Device India Limited
Data Sheet Page 2 of 4