CDIL BF 422 Datasheet
Desi
Vid
lifi
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF420
VIDEO TRANSISTORS BF422
TO-92
Plastic Package
gned For High Voltage
eo Amp
er In Television Receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL 420 422 UNITS
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25ºC
V
CEO
V
CBO
V
EBO
I
C
P
D
300 250 V
300 250 V
5V
500 mA
800 mW
Derate Above 25ºC 6.4 mW/ºC
Power Dissipation@ Tc=25ºC
P
D
2.75 W
Derate Above 25ºC 22 mW/ºC
T
Operating And Storage Junction
, T
j
stg
-55 to +150 ºC
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
R
R
th(j-a)
th(j-c)
156 ºC/W
45 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION 422 420 UNITS
Collector Emitter Voltage*
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
h
V
CE(sat)IC
V
BE(sat) IC
IC=1.0mA,IB=0
IC=100µA.IE=0
IE=100µA, IC=0
VCB=200V,IE=0
VEB=5.0V, IC=0
IC=25mA,VCE=20V
FE
=20mA,IB=2mA
=20mA,IB=2mA
>250 >300 V
>250 >300 V
>5 >5 V
<10 <10 nA
<100 <100 nA
>50 >50
<0.5 <0.5 V
<2 <2 V
Continental Device India Limited
Data Sheet Page 1 of 4
NPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF420
VIDEO TRANSISTORS BF422
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION 422 420 UNITS
DYNAMIC CHARACTERISTICS
Transition Frequency
Feedback Capacitance
*Pulse Condition: = Pulse Width <
f
C
300us, Duty Cycle <2.0%.
IC=10mA, VCE=10V
T
f=50MHz
VCB=30V, IE=0
re
f=1.0MHz
>60 >60 MHz
<1.6 <1.6 pF
Continental Device India Limited
Data Sheet Page 2 of 4
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