CDIL BD 677 Datasheet
POWER DARLINGTON TRANSISTORS
SGS-THOMSONPREFERREDSALESTYPES
DESCRIPTION
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mountedin JedecSOT-32 plasticpackage.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD678,
BD678A, BD680, BD680A and BD682
respectively.
BD677/A/679/A681
BD678/A/680/A/682
COMPLEMENTARY SILICON
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
R1Typ. = 10 KΩ R2Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val ue Uni t
NPN BD677/A BD679/A BD681
PNP BD 678/ A BD680/A BD682
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-B ase Voltage (IE= 0 ) 60 80 100 V
CBO
Collector-E mit t e r Voltage ( IB= 0 ) 60 80 100 V
CEO
Emitter-B ase V olt age (IC=0) 5 V
EBO
Collector Cur rent 4 A
I
C
Collector Pe ak Current 6 A
CM
Base Current 0.1 A
I
B
Total Dissipation at Tc≤ 25oC40W
tot
St orage Temperatu re -65 to 150
stg
Max. Opera ti ng Junct ion T emper a t ure 150
T
j
o
C
o
C
October 1995
1/4
BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
R
thj-case
R
thj-amb
Therm al Resistanc e Juncti on-c ase Max
Therm al Resistanc e Juncti on-am b ient Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symb ol Paramete r Test Co nditi ons Min. Typ. M ax. Un it
I
CBO
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collect or Cut-off
Current (I
E
=0)
Collect or Cut-off
Current (I
B
=0)
Emitter Cut-off Current
=0)
(I
C
∗ Collector-Emitter
Sust aining Volt a ge
∗ Collector-Emitter
Sat urat ion Voltage
V
= r at ed V
CE
VCE= r at ed V
V
=halfratedV
CE
V
=5V 2 mA
EB
CBO
CBO
TC= 100oC
CEO
0.2
2
0.5 mA
IC=50mA
for BD677/ 677A/678/678A
for BD679/ 679A/680/680A
for BD681/ 682
60
80
100
for BD677/ 678/ 6 79/ 680/681/68 2
=1.5A IB=30mA
I
C
2.5
for BD677A/ 678A/679A/680A
=2A IB=40mA
I
C
V
∗ Base-Emitter Voltage for BD677/678/ 6 79/ 68 0/ 681/ 682
BE
=1.5A VCE=3V
I
C
2.8
2.5
for BD677A/ 678A/679A/680A
=2A VCE=3V
I
C
h
∗ DC Current Gai n f or BD677/678/6 79/680/681/68 2
FE
=1.5A VCE=3V
I
C
750
2.5
for BD677A/ 678A/679A/680A
=2A VCE=3V
I
C
h
Small Signal C urrent
fe
IC=1.5A VCE=3V f=1MHz 1
750
Gain
∗ Pulsed: Pulse duration = 300 µs, dutycycle 1.5 %
mA
mA
V
V
V
V
V
V
V
2/4
Loading...