CDIL BD 675 Datasheet
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Darligton Power Transistors BD675/BD677/BD679
DESCRIPTION ·
·With TO-126 package
·Complement to type BD676/678/680
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
BD675 45
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter -base voltage Open collector 5 V
EBO
IC Collector current 4 A
ICM Collector current-Peak 7 A
IB Base current 0.1 A
PC Collector power dissipation
Tj Junction temperature 150
BD677 60
BD679
BD675 45
BD677 60
BD679
Open emitter
Open base
T
=25℃
C
V
80
V
80
40 W
℃
T
Storage temperature -55~150
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to ambient 100 K/W
th j-a
R
Thermal resistance from junction to mounting base 3.12 K/W
th j-mb
℃
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Darligton Power Transistors BD675/BD677/BD679
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BD675 45
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE(on)
I
CBO
I
CEO
I
EBO
Collector-emitter
breakdown voltage
Collector-base
breakdown voltage
Emitter-base breakdown voltage IE=5mA; IC=0 5 V
Collector-emitter saturation voltage IC=1.5A; IB=30mA 2.5 V
Base-emitter on voltage IC=1.5A ; VCE=3V 2.5 V
Collector cut-off current
Collector cut-off current VCE=1/2rated BV
Emitter cut-off current VEB=5V; IC=0 5.0 mA
BD677 60
BD679
BD675 45
BD677 60
BD679
IC=100mA; IB=0
IC=1mA; IE=0
=rated BV
V
CB
=100 ℃
T
a
CBO
V
80
V
80
; IE=0
; IB=0 0.5 mA
CEO
0.2
2.0
mA
hFE DC current gain IC=1.5A ; VCE=3V 750
2
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