Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD439 BD441
DESCRIPTION ·
·With TO-126 package
·Complement to type BD440,BD442
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter -base voltage Open collector 5 V
EBO
IC Collector current (DC) 4 A
ICM Collector current-Peak 7 A
℃)
BD439 60
Open emitter
BD441
BD439 60
Open base
BD441
80
80
V
V
IB Base current 1 A
PC Collector power dissipation TC=25℃ 36 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD439 BD441
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=2A; IB=0.2A 0.8 V
CEsat
V
Base-emitter on voltage IC=10mA ; VCE=5V 0.58 V
BE-1
V
Base-emitter on voltage IC=2A ; VCE=1V 1.5 V
BE-2
V
CEO(SUS)
I
CBO
I
CES
I
EBO
h
FE-1
h
FE-2
h
FE-3
Collector-emitter
sustaining voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 1 mA
DC current gain
DC current gain IC=0.5A ; VCE=1V 40 140
DC current gain
BD439 60
IC=0.1A; IB=0
BD441
BD439 VCB=60V; IE=0
BD441 V
BD439 VCE=60V; VBE=0
BD441 V
BD439 20
BD441
BD439 25
BD441
=80V; IE=0
CB
=80V; VBE=0
CE
IC=10mA ; VCE=5V
IC=2A ; VCE=1V
80
15
15
V
100
100
130
μA
μA
fT Transition frequency IC=250mA; VCE=1V 3 MHz
2