BD433/5/7
®
BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
■ STMicroelectronics P REF ERRED
SALESTYPE
■ COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
The complementary PNP types are BD434,
BD436, and BD438 respectively.
SOT-32
1
2
3
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD433 BD435 BD437
PNP BD434 BD436 BD438
V
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 22 32 45 V
CBO
Collector-Emitter Voltage (VBE = 0) 22 32 45 V
CES
Collector-Emitter Voltage (IB = 0) 22 32 45 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 4 A
I
C
Collector Peak Current (t ≤ 10 ms)
CM
I
Base Current 1 A
B
Total Dissipation at Tc ≤ 25 oC
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
7A
36 W
o
C
o
C
February 2003
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BD433 BD434 BD435 BD436 BD43 7 BD438
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.5
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
= 0)
E
for BD433/434 V
for BD435/436 V
for BD437/438 V
I
CES
Collector Cut-off
Current (V
BE
= 0)
for BD433/434 V
for BD435/436 V
for BD437/438 V
I
EBO
V
CEO(sus)
V
CE(sat)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
Saturation Voltage
V
I
for BD435/436
for BD437/438
IC = 2 A IB = 0.2 A
for BD433/434
for BD435/436
for BD437/438
V
∗ Base-Emitter Voltage IC = 10 mA VCE = 5 V
BE
I
for BD433/434
for BD435/436
for BD437/438
h
∗ DC Current Gain IC = 10 mA VCE = 5 V
FE
for BD433/434
for BD435/436
for BD437/438
I
I
for BD433/434
for BD435/436
for BD437/438
h
FE1/hFE2
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗ Matched Pair IC = 500 mA VCE = 1 V 1.4
f
Transition frequency IC = 250 mA VCE = 1 V 3 MHz
T
= 22 V
CB
= 32 V
CB
= 45 V
CB
= 22 V
CE
= 32 V
CE
= 45 V
CE
= 5 V 1 mA
EB
= 100 mA for BD433/434
C
22
32
45
0.2
0.2
0.2
0.58
= 2 A VCE = 1 V
C
130
130
130
140
= 500 mA VCE = 1 V
C
= 2 A VCE = 1 V
C
40
40
30
85
50
50
40
100
100
100
100
100
100
0.5
0.5
0.6
1.1
1.1
1.2
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
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