CDIL BD 437 Datasheet
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD433/435/437
DESCRIPTION ·
·With TO-126 package
·Complement to type BD434/436/438
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter -base voltage Open collector 5 V
EBO
IC Collector current (DC) 4 A
ICM Collector current-Peak 7 A
℃)
BD433 22
BD435 32
BD437
BD433 22
BD435 32
BD437
Open emitter
45
Open base
45
V
V
IB Base current 1 A
PC Collector power dissipation TC=25℃ 36 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD433/435/437
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEsat
VBE Base-emitter on voltage
V
CEO(SUS)
I
CES
I
CES
I
EBO
Collector-emitter
saturation voltage
Collector-emitter
sustaining voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 1 mA
BD433/435 0.5
I
=2A; IB=0.2A 0.2
C
BD437
BD433/435 1.1
IC=2A ; VCE=1V
BD437
BD433 22
=0.1A; IB=0
BD435 32
BD437
BD433 VCB=22V; IE=0
BD435 VCB=32V; IE=0
BD437 V
BD433 VCE=22V; VBE=0
BD435 VCE=32V; VBE=0
BD437 V
I
C
=45V; IE=0
CB
=45V; VBE=0
CE
45
100 μA
100 μA
V
0.6
1.2
V
V
h
DC current gain
FE-1
h
DC current gain IC=0.5A ; VCE=1V 85 140
FE-2
h
DC current gain
FE-3
fT Transition frequency IC=250mA; VCE=1V 3 MHz
BD433/435 40
IC=10mA ; VCE=5V
BD437
BD433/435 50
IC=2A ; VCE=1V
BD437
30
40
130
2
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