
Intended for use in Medium Power Linear and Switching Applications
Collector Peak Current (t=10ms_
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434
BD435 BD436
BD437 BD438
BD439 BD440
BD441 BD442
NPN PNP
E
C
TO126
Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Total Dissipation @ TC=25ºC P
Total Dissipation @ Ta=25ºC P
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
D
D
Derate above 25ºC 10
BD433 BD435 BD437 BD439 BD441
BD434 BD436 BD438 BD440 BD442
22 32 80
22 32 80
22 32 80
45 60
45 60
45 60
5.0
4.0
7.0
1.0
36.0
1.25
UNIT
V
V
V
V
A
A
A
W
W
mW/ ºC
Operating and Storage
Junction Temperature Range
Tj, T
stg
- 65 to 150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441
R
R
th (j-c)
th (j-a)
3.5
100
TEST CONDITION
BD434 BD436 BD438 BD440 BD442
Collector Cut off Current
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Sustaining
I
I
I
*V
CEO (sus)
CBO
CES
EBO
VCB=Rated V
VBE=0, VCE=Rated V
VEB=5V, IC=0
IC=100mA, IB=0
CBO, IE
=0
<100 <100 <100 <100 <100
<100 <100 <100 <100 <100
CES
<1.0 <1.0 <1.0 <1.0 <1.0 mA
>22 >32 >45 >60 >80 V
Voltage
Collector Emitter Saturation
*V
CE (sat)
IC=2.0A, IB=0.2A
<0.5 <0.5 <0.6 <0.8 <0.8 V
Voltage
Base Emitter On Voltage
*V
BE (on)
IC=10mA, VCE=5V ALL
IC=2.0A, VCE=1V
typ 0.58 V
<1.1 <1.1 <1.2 <1.5 <1.5 V
ºC
ºC/W
ºC/W
UNIT
µA
µA
Continental Device India Limited
Data Sheet Page 1 of 4

EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
*Pulsed Pulse Duration=300
BD435 BD436
BD437 BD438
BD439 BD440
BD441 BD442
NPN PNP
E
C
TO126
Plastic Package
DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441
TEST CONDITION
BD434 BD436 BD438 BD440 BD442
DC Current Gain
*h
/ h
FE1
FE2
Current Gain Bandwidth
*h
FE
Matched
Pairs
f
T
IC=10mA, VCE=5V
IC=500mA, VCE=1V
IC=2.0A, VCE=1V
IC=500mA, VCE=1V ALL
IC=250mA, VCE=1V ALL
>40 >40 >30 >20 >15
>85 >85 >85 >40 >40
>50 >50 >40 >25 >15
<1.4
>3.0 MHz
Product
µµ
UNIT
Continental Device India Limited
Data Sheet Page 2 of 4