CDIL BD 243C Datasheet
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD243/A/B/C
DESCRIPTION ·
·With TO-220C package
·Complement to type BD244/A/B/C
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
℃)
BD243 45
BD243A 60
BD243B 80
BD243C
BD243 45
BD243A 60
BD243B 80
BD243C
Open emitter
Open base
V
100
V
100
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 6 A
ICM Collector current-peak 10 A
IB Base current 2 A
PC Collector power dissipation TC=25℃ 65 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD243/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BD243 45
V
CEO(SUS)
V
CEsat
V
BE
I
CEO
I
CES
I
EBO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=6A;IB=1 A 1.5 V
Base-emitter on voltage IC=6A ; VCE=4V 2.0 V
Collector cut-off current
Collector cut-off current
Emitter cut-off current VEB=5V; IC=0 1 mA
BD243A 60
=30mA; IB=0
I
C
BD243B 80
BD243C
BD243/A VCE=30V; IB=0
BD243B/C V
BD243 VCE=45V; VBE=0
BD243A VCE=60V; VBE=0
BD243B VCE=80V; VBE=0
BD243C VCE=100V; VBE=0
=60V; IB=0
CE
100
0.7 mA
0.4 mA
V
h
DC current gain IC=0.3A ; VCE=4V 30
FE-1
h
DC current gain IC=3A ; VCE=4V 15
FE-2
2