CDIL BCY 79-8 Datasheet
DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 18
DISCRETE SEMICONDUCTORS
BCY78; BCY79
PNP switching transistors
M3D125
1997 Jun 18 2
Philips Semiconductors Product specification
PNP switching transistors BCY78; BCY79
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Switching and amplification.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: BCY58 and BCY59.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
Fig.1 Simplified outline (TO-18) and symbol.
handbook, halfpage
MAM263
1
3
2
3
1
2
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCY78 − −32 V
BCY79 − −45 V
V
CEO
collector-emitter voltage open base
BCY78 − −32 V
BCY79 − −45 V
I
C
collector current (DC) − −100 mA
P
tot
total power dissipation T
amb
≤ 45 °C − 340 mW
T
case
≤ 45 °C − 1 W
h
FE
DC current gain IC= −2 mA; VCE= −5 V
BCY78/VII; BCY79/VII 120 220
BCY78/VIII; BCY79/VIII 180 310
BCY78/IX; BCY79/IX 250 460
BCY78/X 380 630
f
T
transition frequency IC= −10 mA; VCE= −5 V 100 − MHz
t
off
turn-off time I
Con
= −100 mA; I
Bon
= −10 mA; I
Boff
= 10 mA − 400 ns
1997 Jun 18 3
Philips Semiconductors Product specification
PNP switching transistors BCY78; BCY79
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCY78 − −32 V
BCY79 − −45 V
V
CEO
collector-emitter voltage open base
BCY78 − −32 V
BCY79 − −45 V
V
EBO
emitter-base voltage open collector −5 V
I
C
collector current (DC) − −100 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 45 °C − 340 mW
T
case
≤ 45 °C − 1 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 200 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 450 K/W
R
th j-c
thermal resistance from junction to case 150 K/W
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