CDIL BCY 58-10 Datasheet

IS / IECQC 700000
IS / IECQC 750100

Continental Device India Limited

IS/ISO 9002

Lic# QSC/L- 000019.2

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59

TO-18

Low Noise Audio Amplifier Input Stages & Driver Applications
Complementary BCY78/79

ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL BCY58 BCY59 UNITS
Collector -Emitter Voltage
Collector -Emitter Voltage(RBE=10 ohms)
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25 degC
Derate Above 25 deg C
Power Dissipation@ Tc=25 degC
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION BCY58 BCY59 UNITS
Collector -Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current

VCEO 32 45 V
VCES 32 45 V
VEBO 7.0 V
IC 0.2 A
PD 0.6 W

2.28 mW/deg C

PD 1.0 W

6.67 mW/deg C

Tj, Tstg -65 to +200 deg C

Rth(j-c) 150 deg C/W
Rth(j-a) 450 deg C/W

VCEO IC=10mA,IB=0 >32 >45 V
VEBO IE=1uA, IC=0 >7.0 >7.0 V
ICES VCE=32V, VBE=0 <10 - nA

VCE=45V, VBE=0 - <10 nA
Ta=150deg C
VCE=32V, VBE=0 <10 - uA
VCE=45V, VBE=0 - <10 uA

Emitter-Cut off Current

DC Current Gain

Continental Device India Limited

Ta=100deg C

ICEX VCE=32V, VBE=0.2V <20 - uA

VCE=45V, VBE=0.2V - <20 uA

IEBO VEB=5V, IC=0

AII

<10 nA

hFE IC=10uA,VCE=5V

BCY58-7/59-7
BCY58-8/59-8
BCY58-9/59-9

BCY58-10/59-10

­>20
>40

>100

IC=2mA,VCE=5V

BCY58-7/59-7
BCY58-8/59-8
BCY58-9/59-9

BCY58-10/59-10

Data Sheet

120-220
180-310
250-460
380-630

Page 1 of 4

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) BCY58/59
DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS
DC Current Gain

hFE IC=10mA,VCE=1V

BCY58-7/59-7
BCY58-8/59-8

BCY58-9/59-9

BCY58-10/59-10

>80

120 to 400
160 to 630

240 to 1000

IC=100mA,VCE=1V

>40
>45
>60
>60

Collector -Emitter Saturation Voltage

BCY58-7/59-7
BCY58-8/59-8

BCY58-9/59-9

BCY58-10/59-10

VCE(Sat) IC=10mA, IB=0.25mA 0.05 to 0.35 V

IC=100mA, IB=2.5mA 0.15 to 0.70 V

Base -Emitter Saturation Voltage

VBE(Sat) IC=10mA, IB=0.25mA 0.60 to 0.85 V

IC=100mA, IB=2.5mA 0.75 to1.2 V

Base Emitter on Voltage

VBE(on) IC=2mA, VCE=5V 0.55 to 0.70 V

DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product

ft IC=10mA,VCE=5V, >125 MHz

f=100MHz

Output- Capacitance
Input- Capacitance

Cob VCB=10V, f=1MHz <6.0 pF
Cib VBE=0.5V, f=1MHz <15 pF

Small Signal Current Gain

Out put AdmIttance

Input Impedance

Voltage Feedback Ratio

ALL f=1kHz

hfe IC=2mA, VCE=5V

BCY58-7/59-7
BCY58-8/59-8

BCY58-9/59-9

BCY58-10/59-10

hoe IC=2mA, VCE=5V

BCY58-7/59-7
BCY58-8/59-8

BCY58-9/59-9

BCY58-10/59-10

hie IC=2mA, VCE=5V

BCY58-7/59-7
BCY58-8/59-8

BCY58-9/59-9

BCY58-10/59-10

hre IC=2mA, VCE=5V

BCY58-7/59-7
BCY58-8/59-8

BCY58-9/59-9

BCY58-10/59-10

125 to 250
175 to 350
250 to 500
350 to 700

<30 umhos
<50
<60

<100

1.6 to 4.5 kohms

2.5 to 6.0

3.2 to 8.5

4.5-12

Typ1.5 X10-4
Typ 2.0
Typ 2.0
Typ 3.0

Continental Device India Limited

Data Sheet

Page 2 of 4