CDIL BCX70J SMD Datasheet
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking
BCX70G = AG
BCX70H = AH
BCX70J = AJ
BCX70K = AK
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
BCX70G BCX70H
BCX70J BCX70K
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (V
= 0) V
BE
Collector–emitter voltage (open base) V
Collector current (d.c.) I
Total power dissipation at T
= 25 °C P
amb
Junction temperature T
Transition frequency at f = 100 MHz
= 5 V; IC = 10 mA f
V
CE
Noise figure at f: 1 kHz
= 5 V; I
V
CE
RATINGS (at T
200 m A; B = 200 Hz F typ. 2 dB
C:
= 25°C unless otherwise specified)
A
Limiting values
Collector–emitter voltage (V
= 0) V
BE
Collector–emitter voltage (open base) V
Emitter–base voltage (open collector) V
CES
CE0
C
tot
j
T
CES
CE0
EB0
max. 45 V
max. 45 V
max. 200 mA
max. 250 mW
max. 150 ° C
typ. 250
MHz
max. 45 V
max. 45 V
max. 5 V
Continental Device India Limited Data Sheet Page 1 of 4
BCX70G BCX70H
BCX70G BCX70H
BCX70G BCX70H
BCX70G BCX70H
BCX70J BCX70K
Collector current (d.c.) I
Base current l
Total power dissipation up to T
= 25 °C P
amb
Storage temperature T
Junction temperature T
C
B
tot
stg
j
max. 200 mA
max. 50 mA
max. 250 mW
–55 to +150 °C
max. 150 ° C
THERMAL RESISTANCE
From junction to ambient R
th j–a
= 500
CHARACTERISTICS
T
25 °C unless otherwise specified
amb:
Collector–emitter cut–off current
V
= 0; VCE = 45 V I
BE
V
= 0; VCE = 45 V; T
BE
= 150 °C I
amb
<20nA
CES
<20µA
CES
Emitter–base cut–off current
I
= 0; VEB = 4 V I
C
<20nA
EB0
Saturation voltages
at I
= 10 mA; IB = 0,25 mA V
C
= 50 mA; IB = 1,25 mA V
at I
C
V
V
CEsat
BEsat
CEsat
BEsat
0,05 to 0,35 V
0,6 to 0,85 V
0,1 to 0,55 V
0,7 to 1,05 V
Transition frequency at f = 100 MHz > 125
IC = 10 mA; VCE = 5 V f
T
typ. 250
Collector capacitance at f = 1 MHz
I
= Ie = 0; VCB = 10 V C
E
c
typ. 2,5 pF
Emitter capacitance at f = 1 MHz
I
= Ic = 0; VEB = 0,5 V C
C
Noise figure at R
I
= 200 µA; VCE = 5 V; f = 1 kHz; B = 200 Hz F < 6 dB
C
= 2 kΩ , typ. 2 dB
S
BCX70G 70H 70J 70K
e
typ. 8 pF
D.C. current gain
V
= 5V; lC = 10µAh
CE
V
= 5 V; IC = 2 mA h
CE
> — 40 30 100
FE
> 120 180 250 380
FE
< 220 310 460 630
V
= 1 V; IC = 50 mA h
CE
> 50 70 90 100
FE
Small-signal current gain
= 5 V; IC = 2 mA; f = 1 kHz hfe
V
CE
> 125 175 250 350
< 250 350 500 700
Output admittance
= 5 V; IC = 2 mA; f = 1 kHz hoe typ. 18 24 30 50 µS
V
CE
Base-emitter voltage
V
= 5 V; IC = 2 mA V
CE
BE
typ. 0,65 V
0,55 to 0.75 V
K/W
MHz
MHz
= 5 V; IC = 10 µAV
V
CE
V
= 1 V; IC = 50 mA V
CE
Continental Device India Limited Data Sheet Page 2 of 4
typ. 0,52 V
BE
typ. 0,78 V
BE
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