CDIL BCX 70H SMD Datasheet

NPN Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BCW61, BCX71 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

1)

BCW60, BCX70

3

2

1

Type Marking Pin Configuration Package

BCW60B
BCW60C
BCW60D
BCW60FF
BCX70G
BCX70H
BCX70J
BCX70K

1

Pb-containing package may be available upon special request

ABs
ACs
ADs
AFs
AGs
AHs
AJs
AKs

1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B

2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E

3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C

SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23

1

2007-04-20

Maximum Ratings

BCW60, BCX70

Parameter

Collector-emitter voltage

Symbol Value Unit

V

BCW60, ...60FF
BCX70

Collector-base voltage

V

BCW60, ...60FF
BCX70

Emitter-base voltage V
Collector current I
Peak collector current I
Peak base current I
Total power dissipation

T

≤ 71 °C

S

P

Junction temperature T
Storage temperature T

CEO

CBO

EBO
C
CM
BM

tot

j
stg

32
45

32
45

6
100 mA
200
200
330 mW

150 °C

-65 ... 150

V

Thermal Resistance
Parameter

Junction - soldering point

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

1)

Symbol Value Unit

R

thJS

≤ 240

K/W

2

2007-04-20

Electrical Characteristics at TA = 25°C, unless otherwise specified

BCW60, BCX70

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 , BCW60, ...60FF

C

I

= 10 mA, IB = 0 , BCX70

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0 , BCW60, ...60FF

C

I

= 10 µA, IE = 0 , BCX70

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

Collector-base cutoff current

V

= 32 V, IE = 0 , BCW60, ...60FF

CB

V

= 45 V, IE = 0 , BCX70

CB

V

= 32 V, IE = 0 , TA = 150 °C, BCW60, ...60FF

CB

V

= 45 V, IE = 0 , TA = 150 °C, BCX70

CB

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

32
45

32
45

-

-

-

-

6 - -

-

-

-

-

-

-

-

-

-

-

-

-

0.02

0.02
20
20

V

µA

Emitter-base cutoff current

V

= 4 V, IC = 0

EB

DC current gain-

I

= 10 µA, VCE = 5 V, hFE-grp. G

C

I

= 10 µA, VCE = 5 V, hFE-grp. B/ H

C

I

= 10 µA, VCE = 5 V, hFE-grp. C/ J/ FF

C

I

= 10 µA, VCE = 5 V, hFE-grp. D/ K

C

I

= 2 mA, VCE = 5 V, hFE-grp. G

C

I

= 2 mA, VCE = 5 V, hFE-grp. B/ H

C

I

= 2 mA, VCE = 5 V, hFE-grp. C/ J/ FF

C

I

= 2 mA, VCE = 5 V, hFE-grp. D/ K

C

I

= 50 mA, VCE = 1 V, hFE-grp. G

C

I

= 50 mA, VCE = 1 V, hFE-grp. B/ H

C

I

= 50 mA, VCE = 1 V, hFE-grp. C/ J/ FF

C

I

= 50 mA, VCE = 1 V, hFE-grp. D/ K

C

I

EBO

h

FE

- - 20 nA

20
20

40
100
120
180

250

380

50

70

90
100

140
200
300
460
170
250
350
500

-

-

-

-

-

-

-

-

220

310

460
630

-

-

-

-

-

3

2007-04-20

DC Electrical Characteristics

BCW60, BCX70

Parameter

Characteristics

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.25 mA

C

I

= 50 mA, IB = 1.25 mA

C

Base emitter saturation voltage1)

I

= 10 mA, IB = 0.25 mA

C

I

= 50 mA, IB = 1.25 mA

C

Base-emitter voltage1)

I

= 10 µA, VCE = 5 V

C

I

= 2 mA, VCE = 5 V

C

I

= 50 mA, VCE = 1 V

C

1

Pulse test: t < 300µs; D < 2%

Symbol Values Unit

min. typ. max.

V

CEsat

V

BEsat

V

BE(ON)

-

-

-

-

-

0.58

-

0.12

0.2

0.7

0.83

0.52

0.65

0.78

0.25

0.55

0.85

1.05

0.7

V

-

-

4

2007-04-20