DISCRETE SEMICONDUCTORS
DATA SH EET
BCW29; BCW30
PNP general purpose transistors
Product specification
Supersedes data of 1999 Apr 13
2004 Jan 13
Philips Semiconductors Product specification
PNP general purpose transistors BCW29; BCW30
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW31 and BCW32.
MARKING
TYPE NUMBER MARKING CODE
BCW29 C1*
BCW30 C2*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline SOT23 and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BCW29 − plastic surface mounted package; 3 leads SOT23
BCW30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter −−32 V
collector-emitter voltage open base; IC= −2mA −−32 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2004 Jan 13 2
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