NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC546, A, B, C
BC547, A. B, C
BC548, A. B, C
TO-92
Plastic Package
SYMBOL
SYMBOL
µ
A
µ
A
C
E
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
B
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current Peak
Emitter Current Peak
Power Dissipation at Ta=25ºC
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
CM
I
BM
I
EM
P
D
Derate Above 25ºC
Storage Temperature
Junction Temperature
T
stg
T
j
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
BC546 BC547 BC548
65 45 30
80 50 30
80 50 30
6 6 5
100
200
200
200
500
4.0
- 65 to +150
150
UNITS
V
V
V
V
mA
mA
mA
mA
mW
mW/ºC
ºC
ºC
THERMAL RESISTANCE
Junction to Ambient in free air
R
th (j-a)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
V
V
V
I
CBO
CEO
CBO
EBO
TEST CONDITION BC546 BC548 UNITS
IC=1mA, IB=0
IC=10µA, IE=0
IE=10µA, IC=0
VCB=30V, IE=0 ALL
VCB=30V, IE=0, Tj=150ºC ALL
Collector Cut Off Current
I
CES
VCE=80V, VBE=0
VCE=50V, VBE=0
VCE=30V, VBE=0
VCE=80V, VBE=0, Tj=125ºC
VCE=50V, VBE=0, Tj=125ºC
VCE=30V, VBE=0, Tj=125ºC
BC546_548Rev_3 201205E
250
BC547
>65 >30 V
>80 >30 V
>6.0 >5.0 V
>45
>50
>6.0
<50
<5.0
<15 nA
<15
<4.0
<4.0
ºC/W
nA
nA
<15 nA
µA
µA
<4.0
Continental Device India Limited
Data Sheet Page 1 of 5
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC546, A, B, C
BC547, A. B, C
BC548, A. B, C
TO-92
Plastic Package
SYMBOL
ABC
IC=2mA, V
=5V
A
B
C
420
800
ABC
IC=100mA, I
=5mA
0.60
V
IC=10mA, V
=5V
0.77
V
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNITS
A
B
A
1.6
4.5
kΩB
k
Ω
C
6.0
15
k
Ω
A
x10-4B
x10-4C
x10
-4
A
B
C
C
B
E
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
DC Current Gain
h
FE
TEST CONDITION MIN MAX UNITS
IC=10µA, VCE=5V
CE
BC546 110 450
BC547/548 110 800
IC=100mA, VCE=5V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
V
CE (sat)
V
BE (sat)
IC=10mA, IB=0.5mA
B
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
Base Emitter On Voltage
V
BE (on)
IC=2mA, VCE=5V
CE
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
TYP
90
150
270
110 220
200 450
120
200
400
0.25 V
0.7
0.9
0.55 0.70 V
V
V
SMALL SIGNAL CHARACTERISTICS
Transistors Frequency
Collector Output Capacitance
Emitter Input Capacitance
f
C
C
Noise Figure NF
Small Signal Current Gain
Input Impedance
Voltage Feedback Ratio
Out Put Admittance
h
h
h
h
T
cbo
ib
fe
ie
re
oe
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz
VEB=0.5V, f=1MHz
IC=0.2mA, VCE=5V, RS=1 kΩ,
f=1KHz, B=200Hz
IC=2mA, VCE=5V, f=1KHz
C
IC=2mA, VCE=5V, f=1KHz
IC=2mA, VCE=5V, f=1KHz
IC=2mA, VCE=5V, f=1KHz
TYP
300
4.5 pF
9.0
10 dB
220
330
600
3.2 8.5
1.5
2.0
3.0
30
60
110
MHz
pF
umhos
umhos
umhos
BC546_548Rev_3 201205E
Continental Device India Limited
Data Sheet Page 2 of 5
Loading...