CDIDI CDLL645UR-1, 1N645UR-1 Datasheet
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
O
JEC
):
100 ˚C/W maximum
THERMAL IMPEDANCE: (Z
O
JX
): 35
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.60 1.70 0.063 0.067
F 0.41 0.55 0.016 0.022
G 3.30 3.70 .130 .146
G1 2.54 REF. .100 REF.
S 0.03 MIN. .001 MIN.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071 FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com
• AVAILABLE IN
JAN, JANTX
AND
JANTXV
PER MIL-PRF-19500/240
• SILICON RECTIFIER
• METALLURGICALLY BONDED
1N645UR-1
CDLL645
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 400 mA @ 25ºC
150 mA @ 150ºC
Derating: 2.0mA/°C between 25ºC to 150ºC
6.0mA/°C between 150ºC to 175ºC
V
RSM
V
RWM
I
FSM
V
F
CAP
TYPE TP=1/120 s @400mA @ V
R
TA=25ºC =4V
V
(pk)
V
(pk)
AV
DC P
F
CDLL, 1N645UR-1 270 225 5 0.8 -1.0 2.0
I
R1
at V
RWMIR2
at V
RWMIR3
at V
RSM
TYPE TA=25ºC TA= 150°C TA=25ºC
µ
A
µ
A
µ
A
CDLL, 1N645UR-1 0.05 25 50
IN645UR-1 and CDLL645
.3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
I
F
- Forward Current - (mA)
1000
100
10
1
0.1
150ºC
100ºC
25ºC
-65ºC
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
I
R
- Reverse Current - (µA)
1000
100
10
1
0.1
.01
.001
150ºC
100ºC
25ºC
-65ºC
NOTE : All temperatures shown on graphs are
junction temperatures
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